Low leakage current double diode CBI BAV199 silicon epitaxial planar type with series pair configuration
Key Attributes
Model Number:
BAV199
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
5nA@75V
Reverse Recovery Time (trr):
3us
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
85V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
160mA
Mfr. Part #:
BAV199
Package:
SOT-23
Product Description
Product Overview
The BAV199 is a silicon epitaxial planar double diode designed for low leakage current applications. It features very low leakage current, medium speed switching times, and a series pair configuration. This diode is suitable for applications requiring minimal current leakage.
Product Attributes
- Type: Silicon Epitaxial Planar Diode
- Configuration: Series pair
- Package: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | |
| Continuous Reverse Voltage | VR | 85 | V | |
| Continuous Forward Current (Single Diode) | IF | 160 | mA | |
| Continuous Forward Current (Double Diode) | IF | 140 | mA | |
| Repetitive Peak Forward Current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 4 | A | at t = 1 s |
| 1 | A | at t = 1 ms | ||
| 0.5 | A | at t = 1 s | ||
| Power Dissipation | PD | 250 | mW | |
| Thermal Resistance Junction to Ambient Air | RJA | 500 | C/W | |
| Operating and Storage Temperature Range | Tj, Tstg | -65 to +150 | C | |
| Electrical Characteristics | ||||
| Reverse Breakdown Voltage | V(BR)R | 85 | V | at IR = 100 A |
| Forward Voltage | VF | - | - | at IF = 1 mA |
| - | - | at IF = 10 mA | ||
| 0.9 | V | at IF = 50 mA | ||
| 1.1 | V | at IF = 150 mA | ||
| Reverse Current | IR | - | - | at VR = 75 V |
| 5 | nA | at VR = 75 V, Tj = 150 C | ||
| Total Capacitance | CT | 2 | pF | at VR = 0, f = 1 MHz |
| Reverse Recovery Time | trr | 3 | s | at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 |
Package Outline: Plastic surface mounted package; 3 leads SOT-23
2410121246_CBI-BAV199_C2836099.pdf
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