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quality PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications factory
quality PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications factory

PNP Silicon Epitaxial Planar Transistor CBI MMBTRA101SS for Drive Circuit and Switching Applications

Key Attributes
Model Number: MMBTRA101SS
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMBTRA101SS
Package:
SOT-23
Product Description

Product Overview

The MMBTRA series are PNP Silicon Epitaxial Planar Transistors designed for switching and interface circuit applications. They are suitable for drive circuit applications and are available in multiple models with varying resistance and voltage ratings.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: PNP Silicon Epitaxial Planar Transistor
  • Application: Switching and interface circuit, drive circuit

Technical Specifications

Model R1 (K) R2 (K) Output Voltage (-VO) Input Voltage (-VI) Output Current (-IO) Total Power Dissipation (Ptot) Junction Temperature (Tj) Storage Temperature Range (Tstg) DC Current Gain (GI) at -VO = 5 V, -IO = 10 mA (Min.) Output Cutoff Current (-IO(OFF)) at -VO = 50 V (Max.) Input Current (-II) at -VI = 5 V (Typ.) Output Voltage (-VO(ON)) at -IO = 10 mA, -II = 0.5 mA (Max.) Input Voltage (-VI(ON)) at -VO = 0.2 V, -IO = 5 mA (Typ.) Input Voltage (-VI(OFF)) at -VO = 5 V, -IO = 0.1 mA (Typ.) Transition Frequency (fT) at -VO = 10 V, -IO = 5 mA (Typ.)
MMBTRA101SS 4.101 7.4 50 V -20 V 100 mA 200 mW 150 C -55 to +150 C 30 500 nA 1.8 mA 0.3 V 2 V 1 V 200 MHz
MMBTRA102SS 1.102 0.10 50 V -30 V 100 mA 200 mW 150 C -55 to +150 C 50 500 nA 0.88 mA 0.3 V 2.4 V 1 V 200 MHz
MMBTRA103SS 2.103 2.22 50 V -40 V 100 mA 200 mW 150 C -55 to +150 C 70 500 nA 0.36 mA 0.3 V 3 V 1 V 200 MHz
MMBTRA104SS 4.104 7.47 50 V -40 V 100 mA 200 mW 150 C -55 to +150 C 80 500 nA 0.18 mA 0.3 V 5 V 1 V 200 MHz
MMBTRA105SS 2.105 2.47 50 V -12 V 100 mA 200 mW 150 C -55 to +150 C 80 500 nA 3.6 mA 0.3 V 1.1 V 0.5 V 200 MHz
MMBTRA106SS 4.106 7.47 50 V -20 V 100 mA 200 mW 150 C -55 to +150 C 80 500 nA 1.8 mA 0.3 V 1.3 V 0.5 V 200 MHz

2509181520_CBI-MMBTRA101SS_C51814176.pdf

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