Surface Mount Schottky Diode CBI BAS70 with Low Turn On Voltage and Fast Switching in SOT 23 Package
Key Attributes
Model Number:
BAS70
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Current - Rectified:
70mA
Mfr. Part #:
BAS70
Package:
SOT-23
Product Description
Product Overview
This Surface Mount Schottky Barrier Diode offers low turn-on voltage and fast switching capabilities, making it suitable for various electronic applications. It features a PN junction guard ring for enhanced transient and ESD protection. Available in the SOT-23 plastic package, this diode is designed for reliable performance in demanding environments.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Model | Marking Code | Features |
|---|---|---|
| BAS70 | 73 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| BAS70-04 | 74 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| BAS70-05 | 75 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| BAS70-06 | 76 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 70 | V | |
| Non-Repetitive Peak Reverse Voltage | VRSM | 70 | V | |
| Maximum DC Blocking Voltage | VR | 70 | V | |
| Average Forward Rectified Current | IF(AV) | 70 | mA | |
| Peak Forward Surge Current | IFSM | 100 | mA | (t < 10 ms) |
| Power Dissipation | PD | 200 | mW | |
| Thermal Resistance Junction to Ambient Air | RJA | 625 | OC/W | |
| Operating Junction Temperature Range | Tj | -55 to +125 | OC | |
| Storage Temperature Range | Tstg | -65 to +150 | OC | |
| Forward Voltage | VF | - | V | at IF = 1 mA |
| Forward Voltage | VF | - | V | at IF = 15 mA |
| Forward Voltage | VF | 0.41 | V | at IF = 1 mA |
| Forward Voltage | VF | 1 | V | at IF = 15 mA |
| Reverse Breakdown Voltage | V(BR)R | 70 | V | at IR = 10 A |
| Reverse Current | IR | - | nA | at VR = 50 V |
| Reverse Current | IR | 100 | nA | at VR = 50 V |
| Total Capacitance | CT | - | pF | at VR = 0 , f = 1 MHz |
| Total Capacitance | CT | 2 | pF | at VR = 0 , f = 1 MHz |
| Reverse Recovery Time | trr | - | ns | at IF = IR = 10 mA to IR = 1 mA, RL = 100 |
| Reverse Recovery Time | trr | 5 | ns | at IF = IR = 10 mA to IR = 1 mA, RL = 100 |
| Symbol | Dimension in Millimeters (Min) | Dimension in Millimeters (Max) |
|---|---|---|
| A | 0.90 | 1.10 |
| A1 | 0.013 | 0.100 |
| B | 1.80 | 2.00 |
| bp | 0.35 | 0.50 |
| C | 0.09 | 0.150 |
| D | 2.80 | 3.00 |
| E | 1.20 | 1.40 |
| HE | 2.20 | 2.80 |
| Lp | 0.20 | 0.50 |
| 0 | 5 |
2509011105_CBI-BAS70_C51315105.pdf
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