Plastic encapsulated Schottky barrier diode CBI BAT64-06 designed for bias isolation and fast recovery
Key Attributes
Model Number:
BAT64-06
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
800mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
750mV@100mA
Current - Rectified:
250mA
Mfr. Part #:
BAT64-06
Package:
SOT-23
Product Description
Product Overview
The BAT64 series Schottky barrier diodes are designed for low-loss, fast-recovery applications, offering excellent performance in meter protection, bias isolation, and clamping scenarios. Featuring an integrated diffused guard ring and a low forward voltage, these diodes ensure reliable operation across a wide temperature range.
Product Attributes
- Brand: SCHOTTKY BARRIER DIODE
- Integrated Diffused Guard Ring: Yes
- Marking (BAT64-06): 66S
- Marking (BAT64-05): 65S
- Marking (BAT64-04): 64S
- Encapsulation: Plastic-Encapsulate Diodes
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | BAT64-06 | BAT64-05 | BAT64-04 | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Maximum Ratings @Ta=25 | ||||||
| Peak reverse voltage | VRM | 40 | V | |||
| Non-repetitive Peak forward surge current @t=8.3ms | IFSM | 0.8 | A | |||
| Forward current | IF | 0.25 | A | |||
| Power Dissipation | PD | 250 | mW | |||
| Thermal Resistance JunctiontoAmbient | RJA | 400 | /W | |||
| Operating Junction Temperature Range | Tj | -40 ~ +125 | ||||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||||
| Electrical Ratings @Ta=25 | ||||||
| Reverse breakdown voltage | VR | 40 | V | IR=10A | ||
| Forward voltage | VF | 350 | 430 | 520 | 750 | mV |
| IF=1mA | ||||||
| IF=10mA | ||||||
| IF=30mA | ||||||
| IF=100mA | ||||||
| Reverse current | IR | 2 | A | VR=25V | ||
| Capacitance between terminals | CT | 6 | pF | VR=1V,f=1MHz | ||
Package Type: SOT-23
2508261745_CBI-BAT64-06_C5362102.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
