Rectification and Fast Switching Plastic Encapsulated Transistor Schottky Barrier Diode Array CBI BAS40DW-05
Key Attributes
Model Number:
BAS40DW-05
Product Custom Attributes
Mfr. Part #:
BAS40DW-05
Package:
SOT-363
Product Description
Product Overview
This product is a Plastic-Encapsulate Transistor Schottky Barrier Diode Array designed with a low forward voltage drop and fast switching capabilities. It is suitable for applications requiring efficient rectification and high-speed signal processing.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Limits | Unit |
|---|---|---|---|
| Non-Repetitive Peak reverse voltage | VRM | 40 | V |
| DC Blocking Voltage | VR | 40 | V |
| Average Rectified Output Current | IO | 200 | mA |
| Power Dissipation | Pd | 200 | mW |
| Thermal Resistance, Junction to Ambient Air | RJA | 625 | /W |
| Junction temperature | TJ | 125 | |
| Storage temperature range | TSTG | -65-125 |
| Parameter | Symbol | Test conditions | MIN | MAX | UNIT |
|---|---|---|---|---|---|
| Reverse breakdown voltage | V(BR) | IR= 10A | 40 | V | |
| Reverse voltage leakage current | IR | VR=30V | 200 | nA | |
| Forward voltage | VF | IF=1mA | 380 | mV | |
| IF=40mA | 1000 | mV | |||
| Total capacitance | CT | VR=0,f=1MHz | 5 | pF | |
| Reverse recovery time | t r r | IF=10mA, IR=IF=1mA RL=100 | 5 | nS |
2509181520_CBI-BAS40DW-05_C51814209.pdf
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