General purpose diode CBI BAV70 with 6 nanosecond switching time and 2 ampere forward surge current rating
Key Attributes
Model Number:
BAV70
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@70V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
70V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV70
Package:
SOT-23
Product Description
Product Overview
The SO-23 Plastic-Encapsulated Diodes are designed for general-purpose switching applications, offering a fast switching speed and high conductance. These diodes are suitable for various electronic circuits requiring efficient switching performance.
Product Attributes
- Package Type: SOT-23
- Marking: A4 BAV70
Technical Specifications
| Parameter | Value | Condition |
|---|---|---|
| DC Blocking Voltage | 70 V | VR |
| Reverse Breakdown Voltage | 70 V | VRM |
| Forward Voltage | 0.715 V | IF=1mA |
| Forward Voltage | 0.855 V | IF=10mA |
| Forward Voltage | 1 V | IF=50mA |
| Forward Voltage | 1.25 V | IF=150mA |
| Reverse Current | 2.5 µA | VR=70V |
| Capacitance Between Terminals | 1.5 pF | VR=0, f=1MHz |
| Switching Time (trr) | 6 ns | IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω |
| Repetitive Peak Forward Current | 500 mA | IFRM |
| Forward Surge Current (Non-Repetitive) | 2.0 A | IFSM @t=8.3ms |
| Power Dissipation | 225 mW | PD |
| Thermal Resistance Junction to Ambient | 556 °/W | RJA |
| Operating Junction Temperature | 150 °C | TJ |
| Storage Temperature | -55~+150 °C | TSTG |
2410121455_CBI-BAV70_C2828461.pdf
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