Electronic switching diodes CBI BAV99 designed for fast switching applications in various circuits
Key Attributes
Model Number:
BAV99
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAV99
Package:
SOT-23
Product Description
Product Overview
The BAV99 is a series of fast switching diodes designed for general-purpose switching applications. These diodes offer high conductance and are suitable for various electronic circuits requiring rapid switching capabilities.
Product Attributes
- Type: Switching Diodes
- Package: SOT-23 (Plastic surface mounted package; 3 leads)
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | |
| Continuous Reverse Voltage | VR | 75 | V | |
| Continuous Forward Current (Double Diode Loaded) | IF | 125 | mA | |
| Continuous Forward Current (Single Diode Loaded) | IF | 215 | mA | |
| Repetitive Peak Forward Current | IFRM | 450 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 0.5 | A | at t = 1 s |
| Non-repetitive Peak Forward Surge Current | IFSM | 1 | A | at t = 1 ms |
| Non-repetitive Peak Forward Surge Current | IFSM | 4.5 | A | at t = 1 s |
| Power Dissipation | Ptot | 350 | mW | Ta = 25 C |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -65 to +150 | C | |
| Forward Voltage | VF | 0.715 | V | at IF = 1 mA |
| Forward Voltage | VF | 0.855 | V | at IF = 10 mA |
| Forward Voltage | VF | 1 | V | at IF = 50 mA |
| Forward Voltage | VF | 1.25 | V | at IF = 150 mA |
| Reverse Current | IR | 30 | nA | at VR = 25 V |
| Reverse Current | IR | 1 | A | at VR = 75 V |
| Reverse Current | IR | 30 | A | at VR = 25 V, Tj = 150 C |
| Reverse Current | IR | 50 | A | at VR = 75 V, Tj = 150 C |
| Diode Capacitance | Cd | 1.5 | pF | at VR = 0 , f = 1 MHz |
| Reverse Recovery Time | trr | 4 | ns | at IF = 10 mA, IR = 1 mA, RL = 100 |
2409272232_CBI-BAV99_C2828460.pdf
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