Plastic Encapsulated Switching Diode CBI BAV70T Suitable for Various Electronic Circuit Applications
Key Attributes
Model Number:
BAV70T
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@75V
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
85V
Diode Configuration:
1 Pair Common Cathode
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
75mA
Mfr. Part #:
BAV70T
Package:
SOT-523
Product Description
Product Overview
This series of plastic-encapsulated switching diodes are designed for general-purpose switching applications, offering fast switching speeds and high conductance. Available models include the BAW56T, BAV70T, and BAV99T, suitable for various electronic circuits requiring efficient switching.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Plastic-Encapsulated
Technical Specifications
| Model | Marking | Reverse Voltage (VR) | Forward Current (IO) | Forward Power Dissipation (PD) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Reverse Breakdown Voltage (V(BR)) | Reverse Voltage Leakage Current (IR1) | Reverse Voltage Leakage Current (IR2) | Forward Voltage (VF) | Diode Capacitance (CD) | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAW56T | JD | 85 V | 75 mA | 150 mW | 150 | -55~+150 | 85 V @ IR=1A | 2 A @ VR=75V | 0.03 A @ VR=25V | 715 mV @ IF=1mA 855 mV @ IF=10mA 1000 mV @ IF=50mA 1250 mV @ IF=150mA | 1.5 pF @ VR=0, f=1MHz | 4 ns @ IF=IR=10mA, Irr=0.1IR, RL=100 |
| BAV70T | JJ | 85 V | 75 mA | 150 mW | 150 | -55~+150 | 85 V @ IR=1A | 2 A @ VR=75V | 0.03 A @ VR=25V | 715 mV @ IF=1mA 855 mV @ IF=10mA 1000 mV @ IF=50mA 1250 mV @ IF=150mA | 1.5 pF @ VR=0, f=1MHz | 4 ns @ IF=IR=10mA, Irr=0.1IR, RL=100 |
| BAV99T | JE | 85 V | 75 mA | 150 mW | 150 | -55~+150 | 85 V @ IR=1A | 2 A @ VR=75V | 0.03 A @ VR=25V | 715 mV @ IF=1mA 855 mV @ IF=10mA 1000 mV @ IF=50mA 1250 mV @ IF=150mA | 1.5 pF @ VR=0, f=1MHz | 4 ns @ IF=IR=10mA, Irr=0.1IR, RL=100 |
2409271703_CBI-BAV70T_C2919805.pdf
Related Products
Slkor BT151D-600R
Product Overview The BT151 Series are standard SCRs (Silicon Controlled Rectifiers) designed for various AC power control applications. They are suitable for use in washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. Key Features: Sensitive Gate SCR Standard SCRs ...
Durable Slkor ULN2803A High Current Darlington Array for LED Display Relay and Stepper Motor Driving
Product OverviewThe ULN2803 is a monolithic integrated low-voltage, high-current Darlington array. It contains eight independent Darlington driver circuits with built-in clamp diodes, suitable for driving inductive loads such as relays and stepper motors. By paralleling Darlington pairs, higher ...
High Voltage Darlington Transistor Array Slkor ULN2001D for Relay Hammer Lamp and Display Driver
Product OverviewThe ULN2001X is a monolithic high voltage, high current Darlington transistor array integrated circuit. It consists of 3 sets of NPN Darlington tubes, featuring high voltage output characteristics and cathode clamp diodes for inductive load conversion. Each Darlington pair can handle ...
Dual N Channel MOSFET Slkor SL4826A 60V 6.3A with Low RDS ON Resistance and Avalanche Voltage Rating
Product OverviewThe SL4826A is a 60V/6.3A Dual N-Channel MOSFET designed for high-density cell design, offering ultra-low RDS(ON). It is fully characterized for avalanche voltage and current and features an excellent package for good heat dissipation. This MOSFET is ideal for power switching ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
