Low forward voltage silicon epitaxial planar Schottky barrier diode CBI RB551V-30 for high frequency
Key Attributes
Model Number:
RB551V-30
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100uA@20V
Voltage - DC Reverse (Vr) (Max):
30V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
470mV@500mA
Current - Rectified:
500mA
Mfr. Part #:
RB551V-30
Package:
SOD-323
Product Description
Product Overview
The RB551V-30 is a silicon epitaxial planar Schottky barrier diode designed for small surface mounting applications. It offers ultra-low forward voltage (VF) and high reliability, making it suitable for high-frequency rectification and switching regulation applications.
Product Attributes
- Type: Silicon Epitaxial Planar Schottky Barrier Diode
- Mounting Type: Small surface mounting
- Package: SOD-323
- Marking Code: "D"
- Handling Note: ESD sensitive product handling required.
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||
| Peak Reverse Voltage | VRM | 30 | V |
| DC Reverse Voltage | VR | 20 | V |
| Mean Rectifying Current | IO | 0.5 | A |
| Peak Forward Surge Current (60 Hz for 1 Cyc.) | IFSM | 2 | A |
| Junction Temperature | Tj | 125 | C |
| Storage Temperature Range | Tstg | -40 to +125 | C |
| Characteristics at Ta = 25 C | |||
| Forward Voltage at IF = 100 mA | VF | 0.36 | V |
| Forward Voltage at IF = 500 mA | VF | 0.47 | V |
| Reverse Current at VR = 20 V | IR | 100 | A |
2410121238_CBI-RB551V-30_C2836062.pdf
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