Plastic Encapsulated Zener Diode CBI BZT52C8V2S Medium Current 200mW Power Dissipation SOD 323 Package
Key Attributes
Model Number:
BZT52C8V2S
Product Custom Attributes
Impedance(Zzt):
15Ω
Diode Configuration:
Independent
Zener Voltage(Range):
7.7V~8.7V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
8.2V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52C8V2S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general purpose, medium current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.
Product Attributes
- Package Type: SOD-323
- Construction: Planar die
- Power Dissipation: 200mW on ceramic PBC
- Availability: Lead-free version
Technical Specifications
| Model | Marking | Zener Voltage Range (Note 2) | Test Current (IZT) | Maximum Zener Impedance (ZZT@IZT) (Note 3) | Maximum Reverse Current (IZK) (Note 2) | Forward Voltage (VF @ IF = 10mA) (Note 2) | Power Dissipation (Note 1) | Thermal Resistance (RJA) | Junction Temperature (Tj) | Storage Temperature Range (Tstg) |
|---|---|---|---|---|---|---|---|---|---|---|
| Nom(V) | Min(V) | Max(V) | (mA) | () | (A) | (V) | (mW) | (/W) | () | () | ||
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 100 | 50 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 100 | 20 | 0.9 | ||||
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 95 | 10 | 0.9 | ||||
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 95 | 5 | 0.9 | ||||
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 90 | 5 | 0.9 | ||||
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 90 | 3 | 0.9 | ||||
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 90 | 3 | 0.9 | ||||
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 80 | 3 | 0.9 | ||||
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 2 | 0.9 | ||||
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 40 | 1 | 0.9 | ||||
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 10 | 3 | 0.9 | ||||
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 15 | 2 | 0.9 | ||||
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 15 | 1 | 0.9 | ||||
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 15 | 0.7 | 0.9 | ||||
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 15 | 0.5 | 0.9 | ||||
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 20 | 0.2 | 0.9 | ||||
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 20 | 0.1 | 0.9 | ||||
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 25 | 0.1 | 0.9 | ||||
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 30 | 0.1 | 0.9 | ||||
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 30 | 0.1 | 0.9 | ||||
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 40 | 0.1 | 0.9 | ||||
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 45 | 0.1 | 0.9 | ||||
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 55 | 0.1 | 0.9 | ||||
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 55 | 0.1 | 0.9 | ||||
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 70 | 0.1 | 0.9 | ||||
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 80 | 0.1 | 0.9 | ||||
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 80 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 80 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 90 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 130 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2410121326_CBI-BZT52C8V2S_C2886372.pdf
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