Ultra High Speed Switching Diode CBI MMBD914 Silicon Planar Diode in Compact SOT23 Plastic Package
Key Attributes
Model Number:
MMBD914
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD914
Package:
SOT-23
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high-speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding electronic circuits. The diode is housed in a SOT-23 plastic package.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Reverse Voltage | VR | 100 | V | |
| Forward Current | IF | 200 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 4 | A | t = 1 s |
| Power Dissipation | Ptot | 350 | mW | Ta = 25 OC |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | -55 to +150 | OC | |
| Forward Voltage | VF | - | 1 V | IF = 10 mA |
| Reverse Breakdown Voltage | V(BR)R | 100 | - V | IR = 100 A |
| Reverse Current | IR | - | 25 nA | VR = 20 V |
| Reverse Current | IR | - | 5 A | VR = 75 V |
| Reverse Recovery Time | trr | - | 4 ns | IF = IR = 10 mA |
| Total Capacitance | CT | - | 4 pF | VR = 0 , f = 1 MHz |
Package Outline (SOT-23)
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.90 | 1.10 | |
| A1 | 0.013 | 0.100 | |
| B | 1.80 | 2.00 | |
| bp | 0.35 | 0.50 | |
| C | 0.09 | 0.150 | |
| D | 2.80 | 3.00 | |
| E | 1.20 | 1.40 | |
| HE | 2.20 | 2.80 | |
| Lp | 0.20 | 0.50 | |
| 0 | 5 |
2410121313_CBI-MMBD914_C21714256.pdf
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