86--14775986446
quality Schottky Barrier Diode CBI BAS70W-06 Plastic Encapsulated with Low Leakage Current and Fast Recovery factory
quality Schottky Barrier Diode CBI BAS70W-06 Plastic Encapsulated with Low Leakage Current and Fast Recovery factory

Schottky Barrier Diode CBI BAS70W-06 Plastic Encapsulated with Low Leakage Current and Fast Recovery

Key Attributes
Model Number: BAS70W-06
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70W-06
Package:
SOT-323
Product Description

Product Overview

The BAS70W series are plastic-encapsulated Schottky barrier diodes designed for applications requiring low turn-on voltage and fast switching speeds. These diodes are available in a lead-free version. They are suitable for general-purpose switching applications.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Packaging: Plastic surface mounted package; 3 leads SOT-323
  • Material: Plastic encapsulation
  • Color: Normal device (unless specified as Green molding compound)

Technical Specifications

Model Marking DC Voltage (VR) Forward Continuous Current (IF) Power Dissipation (PD) Junction Temperature (TJ) Reverse breakdown voltage (V(BR)) Reverse voltage leakage current (IR) Forward voltage (VF) Diode capacitance (CD) Reveres recovery time (trr) Thermal Resistance (RJA) Non-Repetitive Peak Forward Surge Current (IFSM) Storage Temperature (Tstg)
BAS70W K73 70 V 70 mA 200 mW 125 70 V (IR= 10A) 100 nA (VR=50V) 410 mV (IF=1mA) / 1000 mV (IF=15mA) 2 pF (VR=0V,f=1MHz) 5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100) 500 /W 100 mA (@ t = 8.3ms) -55~+150
BAS70W-04 K74 70 V 70 mA 200 mW 125 70 V (IR= 10A) 100 nA (VR=50V) 410 mV (IF=1mA) / 1000 mV (IF=15mA) 2 pF (VR=0V,f=1MHz) 5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100) 500 /W 100 mA (@ t = 8.3ms) -55~+150
BAS70W-05 K75 70 V 70 mA 200 mW 125 70 V (IR= 10A) 100 nA (VR=50V) 410 mV (IF=1mA) / 1000 mV (IF=15mA) 2 pF (VR=0V,f=1MHz) 5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100) 500 /W 100 mA (@ t = 8.3ms) -55~+150
BAS70W-06 K76 70 V 70 mA 200 mW 125 70 V (IR= 10A) 100 nA (VR=50V) 410 mV (IF=1mA) / 1000 mV (IF=15mA) 2 pF (VR=0V,f=1MHz) 5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100) 500 /W 100 mA (@ t = 8.3ms) -55~+150
Symbol Dimension in Millimeters Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

2409272232_CBI-BAS70W-06_C21714125.pdf

Related Products
quality NPN Transistor Slkor BC817-40W SOT-323 Package High Collector Current and Low Saturation Voltage factory
NPN Transistor Slkor BC817-40W SOT-323 Package High Collector Current and Low Saturation Voltage
Product Overview The BC817 is an NPN transistor designed for general AF applications, offering high collector current, high current gain, and a low collector-emitter saturation voltage. It is available in various ranks, each with a specific DC current gain range and marking code. This transistor is ...
quality Power MOSFET SLkor SL5N100D featuring 1000V breakdown and less than 4.2 milliohm on resistance rating factory
Power MOSFET SLkor SL5N100D featuring 1000V breakdown and less than 4.2 milliohm on resistance rating
Product Overview The SL5N100 is an N-channel MOSFET designed for switching applications. It features a high breakdown voltage of 1000V, low on-resistance of less than 4.2 , and a continuous drain current of 5A. Key advantages include extremely high dv/dt capability, 100% avalanche tested, minimized ...
quality Durable Slkor SL49N10G N Channel Enhancement Mode MOSFET Ideal for Motor Drivers and Power Conversion factory
Durable Slkor SL49N10G N Channel Enhancement Mode MOSFET Ideal for Motor Drivers and Power Conversion
Product OverviewThe SL49N10G is an N-Channel Enhancement Mode MOSFET featuring an advanced trench cell design for reliability and ruggedness. It is ROHS Compliant & Halogen-Free and 100% UIS and Rg Tested, making it suitable for demanding applications such as motor drivers and DC-DC converters...
quality power switching N Channel MOSFET Slkor SL60N06 with low on state resistance and high avalanche energy factory
power switching N Channel MOSFET Slkor SL60N06 with low on state resistance and high avalanche energy
Product OverviewThe SL60N06 is a high-performance N-Channel Power MOSFET designed for power switching applications. It features an ultra-low Rds(on) due to its high-density cell design, ensuring excellent efficiency. The device is fully characterized for avalanche voltage and current, offering good ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.