Fast Switching Silicon Diode CBI 1N914WT in SOD 523 Package Suitable for Compact Electronic Circuits

Key Attributes
Model Number: 1N914WT
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
1N914WT
Package:
SOD-523
Product Description

Product Overview

The 1N914WT is a silicon epitaxial planar switching diode designed for general-purpose switching applications. It features a fast switching speed and an ultra-small surface mount package, making it suitable for compact electronic designs.

Product Attributes

  • Marking Code: "A"
  • Package Type: SOD-523

Technical Specifications

Parameter Symbol Min. Max. Unit
Repetitive Reverse Voltage VRRM - 100 V
Average Rectified Forward Current IF(AV) - 200 mA
Non-repetitive Peak Forward Surge Current (Pulse Width = 1 s) IFSM - 0.5 A
Non-repetitive Peak Forward Surge Current (Pulse Width = 1 s) IFSM - 1 A
Power Dissipation Ptot - 150 mW
Junction to Ambient Thermal Resistance RJA - 833 C/W
Junction Temperature Tj - 150 C
Storage Temperature Range Tstg -55 +150 C
Parameter Symbol Value Unit
Breakdown Voltage at IR = 5 A VR 75 V
Breakdown Voltage at IR = 100 A VR 100 V
Forward Voltage at IF = 10 mA VF 1 V
Reverse Current at VR = 20 V IR 25 nA
Reverse Current at VR = 75 V IR 5 A
Diode Capacitance at VR = 0 V, f = 1 MHz Ctot 4 pF
Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 t 4 ns
Dimension Symbol Min. Max. Unit
A A 0.70 0.60 mm
b b 0.4 0.3 mm
p p 0.135 0.100 mm
C C 1.25 1.15 mm
D D 0.85 0.75 mm
E E 1.7 1.5 mm
O O 0.1 - mm
H H - - mm

2410121251_CBI-1N914WT_C2836064.pdf

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