Fast Switching Diode CBI MMBD4448HADW Plastic Encapsulated with Compact Surface Mount Package Design
Key Attributes
Model Number:
MMBD4448HADW
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
MMBD4448HADW
Package:
SOT-363
Product Description
Product Overview
The MMBD4448H series are plastic-encapsulated diodes featuring fast switching speed, an ultra-small surface mount package, and high conductance. They are designed for general-purpose switching applications.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Marking (MMBD4448HADW): KA5
- Marking (MMBD4448HCDW): KA6
- Marking (MMBD4448HSDW): KA7
- Marking (MMBD4448HTW): KAA
- Marking (MMBD4448HAQW): KAB
- Device Color: Normal (if no solid dot), Green (if solid dot indicates green molding compound)
- Pin 1 Indicator: Solid dot
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | @Ta=25 |
| Peak Repetitive Peak Reverse Voltage | VRRM VRWM VR | 80 | V | @Ta=25 |
| Working Peak Reverse Voltage | ||||
| DC Blocking Voltage | VR | 80 | V | @Ta=25 |
| RMS Reverse Voltage | VR(RMS) | 57 | V | @Ta=25 |
| Forward Continuous Current | IFM | 500 | mA | @Ta=25 |
| Average Rectified Output Current | IO | 250 | mA | @Ta=25 |
| Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | Pd | 200 | mW | @Ta=25 |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | @Ta=25 |
| Storage Temperature | TSTG | -55 ~ +150 | ||
| Electrical Characteristics | ||||
| Reverse Breakdown Voltage | V(BR) | 80 | V | IR=100A |
| Forward Voltage | VF1 | 0.62 | V | IF=5mA |
| VF2 | 0.72 | IF=10mA | ||
| VF3 | 0.855 | IF=100mA | ||
| VF4 | 1.0 | IF=150mA | ||
| Reverse Current | IR1 | 100 | nA | VR=70V |
| IR2 | 25 | VR=20V | ||
| Capacitance Between Terminals | CT | 3.5 | pF | VR=0V, f=1MHz |
| Reverse Recovery Time | trr | 4 | ns | IF=IR=10mA, Irr=0.1XIR, RL=100 |
2509181520_CBI-MMBD4448HADW_C51814082.pdf
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