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quality Voltage Regulation Diode CBI BZX84C5V1 Silicon Planar Zener in SOT23 Package for Electronic Circuits factory
quality Voltage Regulation Diode CBI BZX84C5V1 Silicon Planar Zener in SOT23 Package for Electronic Circuits factory

Voltage Regulation Diode CBI BZX84C5V1 Silicon Planar Zener in SOT23 Package for Electronic Circuits

Key Attributes
Model Number: BZX84C5V1
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
60Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.8V~5.4V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
5.1V
Mfr. Part #:
BZX84C5V1
Package:
SOT-23
Product Description

Product Overview

The BZX84CSeries Silicon Planar Zener Diodes are designed for voltage regulation in space-constrained applications. Offered in a convenient SOT-23 surface mount plastic package, these diodes are ideal for high-density PC boards, cellular phones, and handheld portable devices. They provide reliable voltage regulation with a Zener breakdown voltage range from 2.0 V to 75 V.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Technology: Silicon Planar Zener Diodes

Technical Specifications

Model Type Marking Code Nominal Zener Voltage (V) Minimum Zener Voltage (V) Maximum Zener Voltage (V) Test Current (mA) Maximum Dynamic Impedance () Reverse Current (A) at VR (V) Forward Voltage (V) at IF = 10 mA (Max.)
BZX84C2V0 A8 2.0 1.8 2.15 5 100 120 at 0.5 V 0.9 V
BZX84C2V2 B8 2.2 2.08 2.33 5 100 120 at 0.7 V 0.9 V
BZX84C2V4 C8 2.4 2.2 2.6 5 100 50 at 1 V 0.9 V
BZX84C2V7 D8 2.7 2.5 2.9 5 100 20 at 1 V 0.9 V
BZX84C3V0 E8 3.0 2.8 3.2 5 95 10 at 1 V 0.9 V
BZX84C3V3 F8 3.3 3.1 3.5 5 95 5 at 1 V 0.9 V
BZX84C3V6 H8 3.6 3.4 3.8 5 90 5 at 1 V 0.9 V
BZX84C3V9 J8 3.9 3.7 4.1 5 90 3 at 1 V 0.9 V
BZX84C4V3 K8 4.3 4.0 4.6 5 90 3 at 1 V 0.9 V
BZX84C4V7 M8 4.7 4.4 5.0 5 80 3 at 2 V 0.9 V
BZX84C5V1 N8 5.1 4.8 5.4 5 60 2 at 2 V 0.9 V
BZX84C5V6 P8 5.6 5.2 6.0 5 40 1 at 2 V 0.9 V
BZX84C6V2 R8 6.2 5.8 6.6 5 10 3 at 4 V 0.9 V
BZX84C6V8 X8 6.8 6.4 7.2 5 15 2 at 4 V 0.9 V
BZX84C7V5 Y8 7.5 7.0 7.9 5 15 1 at 5 V 0.9 V
BZX84C8V2 Z8 8.2 7.7 8.7 5 15 0.7 at 5 V 0.9 V
BZX84C9V1 A9 9.1 8.5 9.6 5 15 0.5 at 6 V 0.9 V
BZX84C10 B9 10.0 9.4 10.6 5 20 0.2 at 7 V 0.9 V
BZX84C11 C9 11.0 10.4 11.6 5 20 0.1 at 8 V 0.9 V
BZX84C12 D9 12.0 11.4 12.7 5 25 0.1 at 8 V 0.9 V
BZX84C13 E9 13.0 12.4 14.1 5 30 0.1 at 8 V 0.9 V
BZX84C15 F9 15.0 13.8 15.6 5 30 0.05 at 10.5 V 0.9 V
BZX84C16 H9 16.0 15.3 17.1 5 40 0.05 at 11.2 V 0.9 V
BZX84C18 J9 18.0 16.8 19.1 5 45 0.05 at 12.6 V 0.9 V
BZX84C20 K9 20.0 18.8 21.2 5 55 0.05 at 14 V 0.9 V
BZX84C22 M9 22.0 20.8 23.3 5 55 0.05 at 15.4 V 0.9 V
BZX84C24 N9 24.0 22.8 25.6 5 70 0.05 at 16.8 V 0.9 V
BZX84C27 P9 27.0 25.1 28.9 2 80 0.05 at 18.9 V 0.9 V
BZX84C30 R9 30.0 28.0 32.0 2 80 0.05 at 21 V 0.9 V
BZX84C33 X9 33.0 31.0 35.0 2 80 0.05 at 23.1 V 0.9 V
BZX84C36 Y9 36.0 34.0 38.0 2 90 0.05 at 25.2 V 0.9 V
BZX84C39 Z9 39.0 37.0 41.0 2 130 0.05 at 27.3 V 0.9 V
BZX84C43 A0 43.0 40.0 46.0 2 150 0.05 at 30.1 V 0.9 V
BZX84C47 B0 47.0 44.0 50.0 2 170 0.05 at 32.9 V 0.9 V
BZX84C51 C0 51.0 48.0 54.0 2 180 0.05 at 35.7 V 0.9 V
BZX84C56 D0 56.0 52.0 60.0 2 200 0.05 at 39.2 V 0.9 V
BZX84C62 E0 62.0 58.0 66.0 2 215 0.05 at 43.4 V 0.9 V
BZX84C68 F0 68.0 64.0 72.0 2 240 0.05 at 47.6 V 0.9 V
BZX84C75 H0 75.0 70.0 79.0 2 255 0.05 at 52.5 V 0.9 V
Parameter Symbol Value Unit
Power Dissipation PD 350 mW
Thermal Resistance, Junction to Ambient 1) RJA 417 C/W
Junction and Storage Temperature Range Tj, Tstg -65 to +150 C

1) Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina

1) Tested with pulses tp = 20 ms.

Package Outline: Plastic surface mounted package; 3 leads SOT-23


2410121234_CBI-BZX84C5V1_C2832547.pdf

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