Silicon epitaxial planar Schottky barrier diode CBI RB521S-40 with low forward voltage and ultra small mold type package
Key Attributes
Model Number:
RB521S-40
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
90uA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
410mV@200mA
Current - Rectified:
200mA
Mfr. Part #:
RB521S-40
Package:
SOD-523
Product Description
Product Overview
This is a silicon epitaxial planar Schottky barrier diode designed for rectifying small power applications. It features an ultra-small mold type, low forward voltage, and high reliability, making it suitable for various rectifying tasks.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Origin: China
- Package Type: SOD-523
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit |
|---|---|---|---|---|
| Characteristics at Ta = 25 C | ||||
| Forward Voltage at IF = 10 mA | VF | 0.16 | 0.3 | V |
| Forward Voltage at IF = 100 mA | VF | 0.31 | 0.54 | V |
| Forward Voltage at IF = 200 mA | VF | 0.41 | - | V |
| Reverse Current at VR = 10 V | IR | - | 20 | A |
| Reverse Current at VR = 40 V | IR | - | 90 | A |
| Absolute Maximum Ratings | ||||
| Parameter | Symbol | Value | Unit | |
| Repetitive Peak Reverse Voltage | VRM | 45 | V | |
| Reverse Voltage | VR | 40 | V | |
| Mean Rectifying Current | IO | 200 | mA | |
| Peak Forward Surge Current (60Hz for Cyc.) | IFSM | 1 | A | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| PIN DESCRIPTION | |
|---|---|
| 1 | Cathode |
| 2 | Anode |
Marking Code: "Z"
2410121653_CBI-RB521S-40_C2919752.pdf
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