Voltage Regulation Diode CBI BZT52C2V4W Silicon Planar Type with 600 Nanoamp Reverse Leakage Current
Key Attributes
Model Number:
BZT52C2V4W
Product Custom Attributes
Impedance(Zzt):
100Ω
Diode Configuration:
Independent
Zener Voltage(Range):
2.2V~2.6V
Pd - Power Dissipation:
500mW
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C2V4W
Package:
SOD-123
Product Description
Product Overview
The BZT52C...W series are silicon planar Zener diodes ideally suited for automated assembly processes. These diodes offer a total power dissipation of up to 500 mW and are designed for various voltage regulation applications.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Line: BZT52C...W
- Package Type: SOD-123
Technical Specifications
| Model | Marking Code | Zener Voltage (Vznom) (V) | Zener Voltage Range (VZT at IZT) (V) | Test Current (IZT) (mA) | Dynamic Impedance (ZZT at IZT) () | Dynamic Impedance (ZZK at IZK) () | Reverse Leakage Current (IR at VR) (A) | Forward Voltage (VF at IF = 10 mA) (V) | Thermal Resistance Junction to Ambient Air (RthA) (/W) |
|---|---|---|---|---|---|---|---|---|---|
| BZT52C2V4W | MH | 2.4 | 2.2...2.6 | 5 | 100 | 5 | 600 | 0.9 | 340 |
| BZT52C2V7W | MJ | 2.7 | 2.5...2.9 | 5 | 100 | 5 | 20 | 0.9 | 340 |
| BZT52C3V0W | MK | 3.0 | 2.8...3.2 | 5 | 95 | 5 | 10 | 0.9 | 340 |
| BZT52C3V3W | MM | 3.3 | 3.1...3.5 | 5 | 95 | 5 | 5 | 0.9 | 340 |
| BZT52C3V6W | MN | 3.6 | 3.4...3.8 | 5 | 90 | 5 | 5 | 0.9 | 340 |
| BZT52C3V9W | MP | 3.9 | 3.7...4.1 | 5 | 90 | 5 | 3 | 0.9 | 340 |
| BZT52C4V3W | MR | 4.3 | 4...4.6 | 5 | 90 | 5 | 3 | 0.9 | 340 |
| BZT52C4V7W | MX | 4.7 | 4.4...5 | 5 | 80 | 5 | 3 | 0.9 | 340 |
| BZT52C5V1W | MY | 5.1 | 4.8...5.4 | 5 | 60 | 5 | 2 | 0.9 | 340 |
| BZT52C5V6W | MZ | 5.6 | 5.2...6 | 5 | 40 | 5 | 1 | 0.9 | 340 |
| BZT52C6V2W | NA | 6.2 | 5.8...6.6 | 5 | 10 | 5 | 3 | 0.9 | 340 |
| BZT52C6V8W | NB | 6.8 | 6.4...7.2 | 5 | 15 | 5 | 2 | 0.9 | 340 |
| BZT52C7V5W | NC | 7.5 | 7...7.9 | 5 | 15 | 5 | 1 | 0.9 | 340 |
| BZT52C8V2W | ND | 8.2 | 7.7...8.7 | 5 | 15 | 5 | 0.7 | 0.9 | 340 |
| BZT52C9V1W | NE | 9.1 | 8.5...9.6 | 5 | 15 | 5 | 0.5 | 0.9 | 340 |
| BZT52C10W | NF | 10 | 9.4...10.6 | 5 | 20 | 5 | 0.2 | 0.9 | 340 |
| BZT52C11W | NH | 11 | 10.4...11.6 | 5 | 20 | 5 | 0.1 | 0.9 | 340 |
| BZT52C12W | NJ | 12 | 11.4...12.7 | 5 | 25 | 5 | 0.1 | 0.9 | 340 |
| BZT52C13W | NK | 13 | 12.4...14.1 | 5 | 30 | 5 | 0.1 | 0.9 | 340 |
| BZT52C15W | NM | 15 | 13.8...15.6 | 5 | 30 | 5 | 0.1 | 0.9 | 340 |
| BZT52C16W | NN | 16 | 15.3...17.1 | 5 | 40 | 5 | 0.1 | 0.9 | 340 |
| BZT52C18W | NP | 18 | 16.8...19.1 | 5 | 45 | 5 | 0.1 | 0.9 | 340 |
| BZT52C20W | NR | 20 | 18.8...21.2 | 5 | 55 | 5 | 0.1 | 0.9 | 340 |
| BZT52C22W | NX | 22 | 20.8...23.3 | 5 | 55 | 5 | 0.1 | 0.9 | 340 |
| BZT52C24W | NY | 24 | 22.8...25.6 | 5 | 70 | 5 | 0.1 | 0.9 | 340 |
| BZT52C27W | NZ | 27 | 25.1...28.9 | 2 | 80 | 2 | 0.5 | 0.9 | 340 |
| BZT52C30W | PA | 30 | 28...32 | 2 | 80 | 2 | 0.5 | 0.9 | 340 |
| BZT52C33W | PB | 33 | 31...35 | 2 | 80 | 2 | 0.5 | 0.9 | 340 |
| BZT52C36W | PC | 36 | 34...38 | 2 | 90 | 2 | 0.5 | 0.9 | 340 |
| BZT52C39W | PD | 39 | 37...41 | 2 | 130 | 2 | 0.5 | 0.9 | 340 |
| BZT52C43W | 6A | 43 | 40...46 | 2.5 | 130 | 2 | 1 | 0.9 | 340 |
| BZT52C47W | 6B | 47 | 44...50 | 2.5 | 150 | 2 | 1 | 0.9 | 340 |
| BZT52C51W | 6C | 51 | 48...54 | 2.5 | 180 | 2 | 1 | 0.9 | 340 |
| BZT52C56W | 6D | 56 | 52...60 | 2.5 | 180 | 2 | 1 | 0.9 | 340 |
| BZT52C62W | 6E | 62 | 58...66 | 2.5 | 200 | 2 | 0.2 | 0.9 | 340 |
| BZT52C68W | 6F | 68 | 64...72 | 2.5 | 250 | 2 | 0.2 | 0.9 | 340 |
| BZT52C75W | 6H | 75 | 70...79 | 2.5 | 300 | 2 | 0.2 | 0.9 | 340 |
| Absolute Maximum Ratings (Ta = 25) | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation | Ptot | 500 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | Tstg | -65 to +150 |
| Characteristics at Ta = 25 | Symbol | Max. | Unit |
|---|---|---|---|
| Thermal Resistance Junction to Ambient Air | RthA | 340 | /W |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
2509181520_CBI-BZT52C2V4W_C51814217.pdf
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