Plastic Encapsulated Diode CBI BAV99DW Featuring High Conductance and Small Footprint SOT363 Package

Key Attributes
Model Number: BAV99DW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
2 Pair Series Connection
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV99DW
Package:
SOT-363
Product Description

Product Overview

The BAV99DW is a plastic-encapsulated switching diode designed for general-purpose switching applications. It features a fast switching speed and an ultra-small surface mount package (SOT-363). This diode offers high conductance.

Product Attributes

  • Brand: KJG
  • Package: SOT-363
  • Type: Plastic-Encapsulated Diode

Technical Specifications

Parameter Symbol Conditions Limit / Value Unit
Maximum Ratings @Ta=25
Peak Repetitive Peak Reverse Voltage VRRM 75 V
Working Peak Reverse Voltage VRWM 75 V
DC Blocking Voltage VR 75 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 150 mA
Non-Repetitive Peak Forward Surge Current IFSM @ t = 1.0s 2 A
@ t = 1.0s 1 A
Power Dissipation PD 200 mW
Thermal Resistance Junction to Ambient RJA 625 /W
Operating Junction Temperature TJ 150
Storage Temperature TSTG -55~+150
Electrical Characteristics (Ta=25 unless otherwise specified)
Reverse breakdown voltage V(BR) IR= 2.5A 75 V
Reverse voltage leakage current IR VR=75V 2.5 A
VR=20V 0.025 A
Forward voltage VF IF=1mA 715 mV
IF=10mA 855 mV
IF=50mA 1000 mV
IF=150mA 1250 mV
Junction capacitance CT VR=0, f=1MHz 2 pF
Reveres recovery time trr IF=IR=10mA, Irr=0.1IR, RL=100 4 ns

2410121257_CBI-BAV99DW_C2828435.pdf

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