Small Package Silicon Planar Zener Diode CBI MM1Z16 with Voltage Regulation and Low Forward Voltage
Key Attributes
Model Number:
MM1Z16
Product Custom Attributes
Mfr. Part #:
MM1Z16
Package:
SOD-123
Product Description
Product Overview
This series of Silicon Planar Zener Diodes offers a total power dissipation of up to 500 mW and is designed in a small plastic package suitable for surface-mounted applications. With a tolerance of approximately 5%, these diodes provide reliable voltage regulation for various electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOD-123
Technical Specifications
| Model | Marking Code | Zener Voltage (Vz) (V) | Tolerance (Vz) (%) | Test Current (Iz) (mA) | Dynamic Impedance (Zzt) () | Reverse Leakage Current (Ir) (A) | Forward Voltage (VF) at IF = 10 mA (V) |
|---|---|---|---|---|---|---|---|
| MM1Z2V0 | 4A | 2.0 | 1.8...2.15 | 5 | 100 | 5 | 0.5 |
| MM1Z2V2 | 4B | 2.2 | 2.08...2.33 | 5 | 100 | 0.7 | 0.5 |
| MM1Z2V4 | 4C | 2.4 | 2.28...2.56 | 5 | 100 | 1 | 0.5 |
| MM1Z2V7 | 4D | 2.7 | 2.5...2.9 | 5 | 110 | 1 | 0.5 |
| MM1Z3V0 | 4E | 3.0 | 2.8...3.2 | 5 | 120 | 50 | 1 |
| MM1Z3V3 | 4F | 3.3 | 3.1...3.5 | 5 | 130 | 20 | 1 |
| MM1Z3V6 | 4H | 3.6 | 3.4...3.8 | 5 | 130 | 10 | 1 |
| MM1Z3V9 | 4J | 3.9 | 3.7...4.1 | 5 | 130 | 5 | 1 |
| MM1Z4V3 | 4K | 4.3 | 4...4.6 | 5 | 130 | 5 | 1 |
| MM1Z4V7 | 4M | 4.7 | 4.4...5 | 5 | 130 | 2 | 1 |
| MM1Z5V1 | 4N | 5.1 | 4.8...5.4 | 5 | 130 | 2 | 1.5 |
| MM1Z5V6 | 4P | 5.6 | 5.2...6 | 5 | 80 | 1 | 2.5 |
| MM1Z6V2 | 4R | 6.2 | 5.8...6.6 | 5 | 50 | 1 | 3 |
| MM1Z6V8 | 4X | 6.8 | 6.4...7.2 | 5 | 30 | 0.5 | 3.5 |
| MM1Z7V5 | 4Y | 7.5 | 7...7.9 | 5 | 30 | 0.5 | 4 |
| MM1Z8V2 | 4Z | 8.2 | 7.7...8.7 | 5 | 30 | 0.5 | 5 |
| MM1Z9V1 | 5A | 9.1 | 8.5...9.6 | 5 | 30 | 0.5 | 6 |
| MM1Z10 | 5B | 10 | 9.4...10.6 | 5 | 30 | 0.1 | 7 |
| MM1Z11 | 5C | 11 | 10.4...11.6 | 5 | 30 | 0.1 | 8 |
| MM1Z12 | 5D | 12 | 11.4...12.7 | 5 | 35 | 0.1 | 9 |
| MM1Z13 | 5E | 13 | 12.4...14.1 | 5 | 35 | 0.1 | 10 |
| MM1Z14 | 6J | 14 | 13.2...14.9 | 5 | 35 | 0.1 | 10 |
| MM1Z15 | 5F | 15 | 13.8...15.6 | 5 | 40 | 0.1 | 11 |
| MM1Z16 | 5H | 16 | 15.3...17.1 | 5 | 40 | 0.1 | 12 |
| MM1Z18 | 5J | 18 | 16.8...19.1 | 5 | 45 | 0.1 | 13 |
| MM1Z20 | 5K | 20 | 18.8...21.2 | 5 | 50 | 0.1 | 15 |
| MM1Z22 | 5M | 22 | 20.8...23.3 | 5 | 55 | 0.1 | 17 |
| MM1Z24 | 5N | 24 | 22.8...25.6 | 5 | 60 | 0.1 | 19 |
| MM1Z27 | 5P | 27 | 25.1...28.9 | 2 | 70 | 0.1 | 21 |
| MM1Z30 | 5R | 30 | 28...32 | 2 | 80 | 0.1 | 23 |
| MM1Z33 | 5X | 33 | 31...35 | 2 | 80 | 0.1 | 25 |
| MM1Z36 | 5Y | 36 | 34...38 | 2 | 90 | 0.1 | 27 |
| MM1Z39 | 5Z | 39 | 37...41 | 2 | 100 | 2 | 30 |
| MM1Z43 | 6A | 43 | 40...46 | 2 | 130 | 2 | 33 |
| MM1Z47 | 6B | 47 | 44...50 | 2 | 150 | 2 | 36 |
| MM1Z51 | 6C | 51 | 48...54 | 2 | 180 | 1 | 39 |
| MM1Z56 | 6D | 56 | 52...60 | 2 | 180 | 1 | 43 |
| MM1Z62 | 6E | 62 | 58...66 | 2 | 200 | 0.2 | 47 |
| MM1Z68 | 6F | 68 | 64...72 | 2 | 250 | 0.2 | 52 |
| MM1Z75 | 6H | 75 | 70...79 | 2 | 300 | 0.2 | 57 |
| Absolute Maximum Ratings (Ta = 25 C) | |||
|---|---|---|---|
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 500 | mW |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | TStg | -55 to +150 | C |
| Characteristics at Ta = 25 C | ||
|---|---|---|
| Parameter | Symbol | Max. Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 340 C/W |
| Forward Voltage at IF = 10 mA | VF | 0.9 V |
1) Vz is tested with pulses (20 ms).
2) ZZT is measured at IZ by given a very small A.C. current signal.
2510101615_CBI-MM1Z16_C51315371.pdf
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