Silicon Schottky Barrier Diode CBI RB500V-40 with Low Reverse Current and Surface Mount Construction
Key Attributes
Model Number:
RB500V-40
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@10V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
450mV@10mA
Current - Rectified:
100mA
Mfr. Part #:
RB500V-40
Package:
SOD-323
Product Description
Product Overview
This SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE is a small surface mounting type device designed for low current rectification. It offers low Reverse Current (IR) and high reliability, making it suitable for various applications requiring efficient rectification.
Product Attributes
- Type: Schottky Barrier Diode
- Construction: Silicon Epitaxial Planar
- Marking Code: S9
- Handling Note: ESD sensitive product handling required.
Technical Specifications
General Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Reverse Breakdown Voltage at IR = 100 A | V(BR)R | 45 | - | - | V |
| Forward Voltage at IF = 10 mA | VF | - | - | 0.45 | V |
| Reverse Current at VR = 10 V | IR | - | - | 1 | A |
| Capacitance Between Terminals at VR = 10 V, f = 1 MHz | CT | - | 6 | - | pF |
Absolute Maximum Ratings (Ta = 25 C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Reverse Voltage | VRM | 45 | V |
| Power Dissipation | Ptot | 200 | mW |
| Reverse Voltage | VR | 40 | V |
| Mean Rectifying Current | IO | 0.1 | A |
| Peak Forward Surge Current (60 Hz for 1 Cyc.) | IFSM | 1 | A |
| Junction Temperature | Tj | 125 | C |
| Storage Temperature Range | Tstg | -40 to +125 | C |
Package Outline
Plastic surface mounted package; 2 leads (SOD-323)
PINNING
| PIN | DESCRIPTION |
|---|---|
| 1 | Cathode |
| 2 | Anode |
Top View
2410121523_CBI-RB500V-40_C2919744.pdf
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