Silicon Epitaxial Planar Schottky Barrier Diode CBI RB751S-40 for High Speed Switching Applications
Key Attributes
Model Number:
RB751S-40
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@30V
Non-Repetitive Peak Forward Surge Current:
200mA
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB751S-40
Package:
SOD-523
Product Description
Product Overview
This SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE is designed for high-speed switching and detection applications. It features a small surface mounting type, low reverse current, and low forward voltage, offering high reliability. The diode is ESD sensitive and requires appropriate handling.
Product Attributes
- Type: Silicon Epitaxial Planar Schottky Barrier Diode
- Marking Code: "D"
- Package: Plastic surface mounted package; 2 leads SOD-523
Technical Specifications
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Forward Voltage at IF = 1 mA | V | - | 0.37 | V |
| Reverse Current at VR = 30 V | I | - | 0.5 | µA |
| Capacitance Between Terminals at VR = 1 V, f = 1 MHz | C | 2 | - | pF |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Reverse Voltage | VRM | 40 | V |
| Reverse Voltage | VR | 30 | V |
| Mean Rectifying Current | IO | 30 | mA |
| Peak Forward Surge Current (60 Hz, 1 Cycle) | IFSM | 200 | mA |
| Junction Temperature | Tj | 125 | °C |
| Storage Temperature Range | Tstg | -40 to +125 | °C |
2410121456_CBI-RB751S-40_C5362077.pdf
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