Fast Switching High Voltage Diode CBI BAS21W Silicon Epitaxial Planar Type in SOT323 Plastic Package
Key Attributes
Model Number:
BAS21W
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
250V
Operating Junction Temperature Range:
-55℃~+150℃
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21W
Package:
SOT-323
Product Description
Product Overview
This document details the High Voltage Switching Diodes, including models BAS19W, BAS20W, and BAS21W, along with their variants BAS21AW, BAS21CW, and BAS21SW. These silicon epitaxial planar diodes are designed for high-voltage switching applications, offering various reverse voltage ratings and fast switching speeds. They are housed in SOT-323 plastic packages.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-323 Plastic Package
- Material: Silicon Epitaxial Planar
Technical Specifications
| Parameter | Symbol | BAS19W | BAS20W | BAS21W | Value | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25) | ||||||
| Reverse Voltage | VR | 120 | 200 | 250 | V | |
| Continuous Forward Current | IF(AV) | 200 | mA | |||
| Repetitive Peak Forward Current | IFRM | 625 | mA | |||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | |||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 2.5 | A | |||
| Total Device Dissipation | Ptot | 250 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | |||
| Junction and Storage Temperature Range | Tj, Tstg | -55 to +150 | ||||
| Characteristics at Ta = 25 | ||||||
| Reverse Breakdown Voltage (at IR = 100 A) | V(BR)R | 120 | 200 | 250 | V | |
| Forward Voltage (at IF = 100 mA) | VF | 1 | V | |||
| Forward Voltage (at IF = 200 mA) | VF | 1.25 | V | |||
| Reverse Current (at VR = 100 V) | IR | 0.1 | 0.1 | 0.1 | A | |
| Reverse Current (at VR = 150 V) | IR | 100 | 100 | 100 | A | |
| Reverse Current (at VR = 200 V) | IR | - | - | - | A | |
| Reverse Current (at VR = 100 V, Tj = 150) | IR | - | - | - | A | |
| Reverse Current (at VR = 150 V, Tj = 150) | IR | - | - | - | A | |
| Reverse Current (at VR = 200 V, Tj = 150) | IR | - | - | - | A | |
| Total Capacitance (at VR = 0, f = 1 MHz) | Ctot | 5 | pF | |||
| Reverse Recovery Time (at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 ) | trr | 1 (BAS19W) | 3 (BAS20W) | 2 (BAS21W) | ns | |
| 3 (BAS21AW) | 1 (BAS21CW) | 2 (BAS21SW) | ||||
| Marking Code: BAS19W~BAS21W | T3 | |||||
| Marking Code: BAS21AW | F2 | |||||
| Marking Code: BAS21CW | F3 | |||||
| Marking Code: BAS21SW | F4 | |||||
2410121326_CBI-BAS21W_C21714150.pdf
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