High speed switching diode CBI BAV99W epitaxial planar silicon diode offering performance in circuits
Key Attributes
Model Number:
BAV99W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
2uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
85V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV99W
Package:
SOT-323
Product Description
Product Overview
The BAV99W is a silicon epitaxial planar switching diode designed for high-speed applications. It offers reliable performance with specific ratings for repetitive peak reverse voltage, continuous forward current, and peak forward surge current. This diode is suitable for various electronic circuits requiring fast switching characteristics.
Product Attributes
- Marking Code: A7
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | |
| Reverse Voltage | VR | 75 | V | |
| Continuous Forward Current (Single Diode Load) | IF | 150 | mA | |
| Continuous Forward Current (Double Diode Load) | IF | 130 | mA | |
| Repetitive Peak Forward Current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 4 | A | |
| Non-Repetitive Peak Forward Surge Current (at t = 1 ms) | IFSM | 1 | A | |
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | |
| Total Power Dissipation | Ptot | 200 | mW | |
| Thermal Resistance from Junction to Ambient | RJA | 625 | C/W | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Characteristics (at Ta = 25 C) | ||||
| Forward Voltage (at IF = 1 mA) | VF | 0.715 | V | Max. |
| Forward Voltage (at IF = 10 mA) | VF | 0.855 | V | Max. |
| Forward Voltage (at IF = 50 mA) | VF | 1 | V | Max. |
| Forward Voltage (at IF = 150 mA) | VF | 1.25 | V | Max. |
| Reverse Current (at VR = 25 V) | IR | 30 | nA | Max. |
| Reverse Current (at VR = 75 V) | IR | 1 | A | Max. |
| Reverse Current (at VR = 25 V, Tj = 150 C) | IR | 30 | A | Max. |
| Reverse Current (at VR = 75 V, Tj = 150 C) | IR | 50 | A | Max. |
| Diode Capacitance (at VR = 0, f = 1 MHz) | Cd | 1.5 | pF | Max. |
| Reverse Recovery Time (at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 ) | trr | 4 | ns | Max. |
2410121313_CBI-BAV99W_C2836068.pdf
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