Silicon Planar Zener Diode CBI MM5Z4V3 Voltage Regulation Component with 200 Milliwatt Power Rating
Key Attributes
Model Number:
MM5Z4V3
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
90Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4V~4.6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
4.3V
Impedance(Zzk):
1kΩ
Mfr. Part #:
MM5Z4V3
Package:
SOD-523
Product Description
Product Overview
The MM5Z2V0~MM5Z75 series are silicon planar Zener diodes designed for voltage regulation applications. They offer a standard Zener breakdown voltage range from 2.0 V to 75 V and a steady-state power rating of 200 mW. These diodes are suitable for various electronic circuits requiring precise voltage control.
Product Attributes
- Brand: MM (implied from product code MM5Z)
- Material: Silicon Planar
- Package Outline: SOD-523
Technical Specifications
| Model | Type Marking Code | Zener Voltage (VZT) at IZT (mA) | Zener Impedance (ZZT) at IZK (mA) | Zener Impedance (ZZK) at IZK (mA) | Leakage Current (IR) at VR (A) | Forward Voltage (VF) at IF (mA) | |
|---|---|---|---|---|---|---|---|
| MM5Z2V0 | RD | 2.0 (Nom.) | 5 | 100 | 0.5 | 0.9 (at 10 mA) | |
| MM5Z2V2 | RE | 2.2 (Nom.) | 5 | 100 | 0.7 | 0.9 (at 10 mA) | |
| MM5Z2V4 | Z7 | 2.4 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z2V7 | A8 | 2.7 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z3V0 | B8 | 3.0 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z3V3 | C8 | 3.3 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z3V6 | D8 | 3.6 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z3V9 | E8 | 3.9 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z4V3 | F8 | 4.3 (Nom.) | 5 | 1000 | 1 | 0.9 (at 10 mA) | |
| MM5Z4V7 | G8 | 4.7 (Nom.) | 5 | 800 | 1 | 0.9 (at 10 mA) | |
| MM5Z5V1 | H8 | 5.1 (Nom.) | 5 | 500 | 1.5 | 0.9 (at 10 mA) | |
| MM5Z5V6 | I8 | 5.6 (Nom.) | 5 | 200 | 2.5 | 0.9 (at 10 mA) | |
| MM5Z6V2 | J8 | 6.2 (Nom.) | 5 | 100 | 3 | 0.9 (at 10 mA) | |
| MM5Z6V8 | K8 | 6.8 (Nom.) | 5 | 160 | 3.5 | 0.9 (at 10 mA) | |
| MM5Z7V5 | L8 | 7.5 (Nom.) | 5 | 160 | 4 | 0.9 (at 10 mA) | |
| MM5Z8V2 | M8 | 8.2 (Nom.) | 5 | 160 | 5 | 0.9 (at 10 mA) | |
| MM5Z9V1 | N8 | 9.1 (Nom.) | 5 | 160 | 6 | 0.9 (at 10 mA) | |
| MM5Z10 | O8 | 10 (Nom.) | 5 | 160 | 7 | 0.9 (at 10 mA) | |
| MM5Z11 | P8 | 11 (Nom.) | 5 | 160 | 8 | 0.9 (at 10 mA) | |
| MM5Z12 | Q8 | 12 (Nom.) | 5 | 80 | 9 | 0.9 (at 10 mA) | |
| MM5Z13 | R8 | 13 (Nom.) | 5 | 80 | 10 | 0.9 (at 10 mA) | |
| MM5Z15 | S8 | 15 (Nom.) | 5 | 80 | 11 | 0.9 (at 10 mA) | |
| MM5Z16 | T8 | 16 (Nom.) | 2 | 40 | 80 | 12 | 0.9 (at 10 mA) |
| MM5Z18 | U8 | 18 (Nom.) | 2 | 45 | 80 | 13 | 0.9 (at 10 mA) |
| MM5Z20 | V8 | 20 (Nom.) | 2 | 55 | 100 | 15 | 0.9 (at 10 mA) |
| MM5Z22 | W8 | 22 (Nom.) | 2 | 55 | 100 | 17 | 0.9 (at 10 mA) |
| MM5Z24 | X8 | 24 (Nom.) | 2 | 70 | 120 | 19 | 0.9 (at 10 mA) |
| MM5Z27 | Y8 | 27 (Nom.) | 2 | 80 | 300 | 21 | 0.9 (at 10 mA) |
| MM5Z30 | Z8 | 30 (Nom.) | 2 | 80 | 300 | 23 | 0.9 (at 10 mA) |
| MM5Z33 | A9 | 33 (Nom.) | 2 | 80 | 300 | 25 | 0.9 (at 10 mA) |
| MM5Z36 | B9 | 36 (Nom.) | 2 | 90 | 500 | 27 | 0.9 (at 10 mA) |
| MM5Z39 | C9 | 39 (Nom.) | 2 | 130 | 500 | 30 | 0.9 (at 10 mA) |
| MM5Z43 | D9 | 43 (Nom.) | 1 | 150 | 500 | 33 | 0.9 (at 10 mA) |
| MM5Z47 | E9 | 47 (Nom.) | 1 | 170 | 500 | 36 | 0.9 (at 10 mA) |
| MM5Z51 | F9 | 51 (Nom.) | 1 | 180 | 500 | 39 | 0.9 (at 10 mA) |
| MM5Z56 | G9 | 56 (Nom.) | 1 | 200 | 500 | 43 | 0.9 (at 10 mA) |
| MM5Z62 | H9 | 62 (Nom.) | 1 | 215 | 500 | 47 | 0.9 (at 10 mA) |
| MM5Z68 | I9 | 68 (Nom.) | 1 | 240 | 500 | 52 | 0.9 (at 10 mA) |
| MM5Z75 | J9 | 75 (Nom.) | 1 | 255 | 500 | 57 | 0.9 (at 10 mA) |
| Parameter | Symbol | Max. Unit |
|---|---|---|
| Total Device Dissipation | Ptot | 200 mW |
| Junction and Storage Temperature Range | Tj , Tstg | - 65 to + 150 OC |
| Dimension | Unit | Value |
|---|---|---|
| A | mm | 0.70 - 0.60 |
| b | mm | 0.4 - 0.3 |
| p | mm | 0.135 - 0.100 |
| C | mm | 1.25 - 1.15 |
| D | mm | 0.85 - 0.75 |
| E | mm | 1.7 - 1.5 |
| H | mm | 0.1 |
2410121257_CBI-MM5Z4V3_C2832570.pdf
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