Zener Diode CBI BZT52B3V6 Planar Die Construction Medium Current Applications 350mW Power Dissipation

Key Attributes
Model Number: BZT52B3V6
Product Custom Attributes
Impedance(Zzt):
90Ω
Zener Voltage(Range):
3.53V~3.67V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
3.6V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52B3V6
Package:
SOD-123
Product Description

Product Overview

This Zener Diode features a planar die construction and 350mW power dissipation on a ceramic PCB. It is designed for general purpose, medium current applications and is ideally suited for automated assembly processes. Lead-free versions are available.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Package: Plastic-Encapsulate Diodes, SOD-123
  • Availability: Lead Free Version Available

Technical Specifications

Type Number Type Code Nominal Zener Voltage (Vz) @ IZT (V) Test Current (IzT) (mA) Maximum Zener Impedance (ZzT) @ IZT () Maximum Reverse Current (IR) @ VR (A) Typical Temperature Coefficient (mV/C) Forward Voltage (VF) @ IF = 10mA (V) Power Dissipation (Pd) (mW) Thermal Resistance (RJA) (C/W) Junction Temperature (Tj) (C) Storage Temperature Range (Tstg) (C)
BZT52B2V4 2WX 2.4 5 100 50 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B2V7 2W1 2.7 5 100 20 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B3V0 2W2 3.0 5 95 10 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B3V3 2W3 3.3 5 95 5 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B3V6 2W4 3.6 5 90 5 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B3V9 2W5 3.9 5 90 3 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B4V3 2W6 4.3 5 90 3 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B4V7 2W7 4.7 5 80 3 -3.5 0.9 350 357 150 -55 ~ +150
BZT52B5V1 2W8 5.1 5 60 2 -2.7 0.9 350 357 150 -55 ~ +150
BZT52B5V6 2W9 5.6 5 40 1 -2.0 0.9 350 357 150 -55 ~ +150
BZT52B6V2 2WA 6.2 5 10 3 0.4 0.9 350 357 150 -55 ~ +150
BZT52B6V8 2WB 6.8 5 15 2 1.2 0.9 350 357 150 -55 ~ +150
BZT52B7V5 2WC 7.5 5 15 1 2.5 0.9 350 357 150 -55 ~ +150
BZT52B8V2 2WD 8.2 5 15 0.7 3.2 0.9 350 357 150 -55 ~ +150
BZT52B9V1 2WE 9.1 5 15 0.5 3.8 0.9 350 357 150 -55 ~ +150
BZT52B10 2WF 10 5 20 0.2 4.5 0.9 350 357 150 -55 ~ +150
BZT52B11 2WG 11 5 20 0.1 5.4 0.9 350 357 150 -55 ~ +150
BZT52B12 2WH 12 5 25 0.1 6.0 0.9 350 357 150 -55 ~ +150
BZT52B13 2WI 13 5 30 0.1 7.0 0.9 350 357 150 -55 ~ +150
BZT52B15 2WJ 15 5 30 0.1 9.2 0.9 350 357 150 -55 ~ +150
BZT52B16 2WK 16 5 40 0.1 10.4 0.9 350 357 150 -55 ~ +150
BZT52B18 2WL 18 5 45 0.1 12.4 0.9 350 357 150 -55 ~ +150
BZT52B20 2WM 20 5 55 0.1 14.4 0.9 350 357 150 -55 ~ +150
BZT52B22 2WN 22 5 55 0.1 16.4 0.9 350 357 150 -55 ~ +150
BZT52B24 2WO 24 5 70 0.1 18.4 0.9 350 357 150 -55 ~ +150
BZT52B27 2WP 27 2 80 0.1 21.4 0.9 350 357 150 -55 ~ +150
BZT52B30 2WQ 30 2 80 0.1 24.4 0.9 350 357 150 -55 ~ +150
BZT52B33 2WR 33 2 80 0.1 27.4 0.9 350 357 150 -55 ~ +150
BZT52B36 2WS 36 2 90 0.1 30.4 0.9 350 357 150 -55 ~ +150
BZT52B39 2WT 39 2 130 0.1 33.4 0.9 350 357 150 -55 ~ +150
BZT52B43 2WU 43 2 130 0.1 36.4 0.9 350 357 150 -55 ~ +150

Package Outline (SOD-123)

Symbol Dimension (mm) Min Dimension (mm) Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. Test frequency: 1kHz.

2509011105_CBI-BZT52B3V6_C51315184.pdf

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