Plastic Encapsulated Zener Diode CBI BZT52C24S with 200mW Power Dissipation and Planar Die Construction
Key Attributes
Model Number:
BZT52C24S
Product Custom Attributes
Impedance(Zzt):
70Ω
Diode Configuration:
Independent
Zener Voltage(Range):
22.8V~25.6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
24V
Impedance(Zzk):
250Ω
Mfr. Part #:
BZT52C24S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general purpose and medium current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.
Product Attributes
- Package Type: SOD-323
- Construction: Planar die
- Power Dissipation: 200mW on ceramic PBC
- Assembly Suitability: Ideally suited for automated assembly processes
- Availability: Lead-free version available
Technical Specifications
| Model | Marking | Nominal Zener Voltage (V) (IZT=5mA) | Zener Voltage Range (V) (IZT=5mA) | Max Zener Impedance () (IZT=5mA) | Max Reverse Current (A) (VR=50% of VZ Nom) | Forward Voltage (V) (IF=10mA) | Power Dissipation (mW) (Ta=25) | Thermal Resistance (/W) (Junction to Ambient) | Junction Temperature () | Storage Temperature Range () |
|---|---|---|---|---|---|---|---|---|---|---|
| BZT52C2V4S | WX | 2.4 | 2.20 - 2.60 | 100 | 50 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C2V7S | W1 | 2.7 | 2.5 - 2.9 | 100 | 20 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V0S | W2 | 3.0 | 2.8 - 3.2 | 95 | 10 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V3S | W3 | 3.3 | 3.1 - 3.5 | 95 | 5 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V6S | W4 | 3.6 | 3.4 - 3.8 | 90 | 5 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V9S | W5 | 3.9 | 3.7 - 4.1 | 90 | 3 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C4V3S | W6 | 4.3 | 4.0 - 4.6 | 90 | 3 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C4V7S | W7 | 4.7 | 4.4 - 5.0 | 80 | 3 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C5V1S | W8 | 5.1 | 4.8 - 5.4 | 60 | 2 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C5V6S | W9 | 5.6 | 5.2 - 6.0 | 40 | 1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C6V2S | WA | 6.2 | 5.8 - 6.6 | 10 | 3 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C6V8S | WB | 6.8 | 6.4 - 7.2 | 15 | 2 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C7V5S | WC | 7.5 | 7.0 - 7.9 | 15 | 1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C8V2S | WD | 8.2 | 7.7 - 8.7 | 15 | 0.7 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C9V1S | WE | 9.1 | 8.5 - 9.6 | 15 | 0.5 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C10S | WF | 10 | 9.4 - 10.6 | 20 | 0.2 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C11S | WG | 11 | 10.4 - 11.6 | 20 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C12S | WH | 12 | 11.4 - 12.7 | 25 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C13S | WI | 13 | 12.4 - 14.1 | 30 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C15S | WJ | 15 | 13.8 - 15.6 | 30 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C16S | WK | 16 | 15.3 - 17.1 | 40 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C18S | WL | 18 | 16.8 - 19.1 | 45 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C20S | WM | 20 | 18.8 - 21.2 | 55 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C22S | WN | 22 | 20.8 - 23.3 | 55 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C24S | WO | 24 | 22.8 - 25.6 | 70 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C27S | WP | 27 | 25.1 - 28.9 | 80 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C30S | WQ | 30 | 28.0 - 32.0 | 80 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C33S | WR | 33 | 31.0 - 35.0 | 80 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C36S | WS | 36 | 34.0 - 38.0 | 90 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C39S | WT | 39 | 37.0 - 41.0 | 130 | 0.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2410121326_CBI-BZT52C24S_C2886379.pdf
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