Lead free planar die zener diode CBI BZT52B22S in compact SOD 323 package for electronic performance

Key Attributes
Model Number: BZT52B22S
Product Custom Attributes
Mfr. Part #:
BZT52B22S
Package:
SOD-323
Product Description

Product Overview

The Zener Diodes, from Heyuan China Base Electronics Technology Co., Ltd., are designed with a planar die construction, making them ideally suited for general purpose, medium current applications and automated assembly processes. These diodes are available in a lead-free version, offering reliable performance for various electronic circuits. Their compact SOD-323 package facilitates efficient integration into modern electronic designs.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Zener Diode
  • Construction: Planar Die
  • Availability: Lead Free Version
  • Package: SOD-323

Technical Specifications

Type Number Type Code Nominal Zener Voltage (V) (VZ@IZT) Zener Voltage Min (V) Zener Voltage Max (V) Test Current (mA) (IZT) Max Zener Impedance () (ZZT@IZK) Max Reverse Current (A) (IR) Typical Temperature Coefficient (mV/C) Forward Voltage (V) (VF) @ IF = 10mA Power Dissipation (mW) (Pd) Thermal Resistance (C/W) (RJA) Junction Temperature (C) (Tj) Storage Temperature Range (C) (Tstg)
BZT52B2V4S 2WX 2.4 2.35 2.45 5 100 1.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B2V7S 2W1 2.7 2.65 2.75 5 100 1.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V0S 2W2 3.0 2.94 3.06 5 95 1.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V3S 2W3 3.3 3.23 3.37 5 95 1.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V6S 2W4 3.6 3.53 3.67 5 90 1.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V9S 2W5 3.9 3.82 3.98 5 90 1.0 -3.5 0.9 200 625 1n 150 -55 ~ +150
BZT52B4V3S 2W6 4.3 4.21 4.39 5 90 1.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B4V7S 2W7 4.7 4.61 4.79 5 80 2.0 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B5V1S 2W8 5.1 5.00 5.20 5 60 2.0 -2.7 0.9 200 625 150 -55 ~ +150
BZT52B5V6S 2W9 5.6 5.49 5.71 5 40 2.0 -2.0 0.9 200 625 150 -55 ~ +150
BZT52B6V2S 2WA 6.2 6.08 6.32 5 10 4.0 0.4 0.9 200 625 150 -55 ~ +150
BZT52B6V8S 2WB 6.8 6.66 6.94 5 15 4.0 1.2 0.9 200 625 150 -55 ~ +150
BZT52B7V5S 2WC 7.5 7.35 7.65 5 15 5.0 2.5 0.9 200 625 150 -55 ~ +150
BZT52B8V2S 2WD 8.2 8.04 8.36 5 15 5.0 3.2 0.9 200 625 150 -55 ~ +150
BZT52B9V1S 2WE 9.1 8.92 9.28 5 15 6.0 3.8 0.9 200 625 150 -55 ~ +150
BZT52B10S 2WF 10 9.80 10.20 5 20 7.0 4.5 0.9 200 625 150 -55 ~ +150
BZT52B11S 2WG 11 10.78 11.22 5 20 8.0 5.4 0.9 200 625 150 -55 ~ +150
BZT52B12S 2WH 12 11.76 12.24 5 25 8.0 6.0 0.9 200 625 150 -55 ~ +150
BZT52B13S 2WI 13 12.74 13.26 5 30 8.0 7.0 0.9 200 625 150 -55 ~ +150
BZT52B15S 2WJ 15 14.70 15.30 5 30 10.5 9.2 0.9 200 625 150 -55 ~ +150
BZT52B16S 2WK 16 15.68 16.32 5 40 11.2 10.4 0.9 200 625 150 -55 ~ +150
BZT52B18S 2WL 18 17.64 18.36 5 45 12.6 12.4 0.9 200 625 150 -55 ~ +150
BZT52B20S 2WM 20 19.60 20.40 5 55 14.0 14.4 0.9 200 625 150 -55 ~ +150
BZT52B22S 2WN 22 21.56 22.44 5 55 15.4 16.4 0.9 200 625 150 -55 ~ +150
BZT52B24S 2WO 24 23.52 24.48 5 70 16.8 18.4 0.9 200 625 150 -55 ~ +150
BZT52B27S 2WP 27 26.46 27.54 2 80 18.9 21.4 0.9 200 625 150 -55 ~ +150
BZT52B30S 2WQ 30 29.40 30.60 2 80 21.0 24.4 0.9 200 625 150 -55 ~ +150
BZT52B33S 2WR 33 32.34 33.66 2 80 23.1 27.4 0.9 200 625 150 -55 ~ +150
BZT52B36S 2WS 36 35.28 36.72 2 90 25.2 30.4 0.9 200 625 150 -55 ~ +150
BZT52B39S 2WT 39 38.22 39.78 2 130 27.3 33.4 0.9 200 625 150 -55 ~ +150

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.
  • Our company currently provide 5.1 V - 20 V products only.

2510101615_CBI-BZT52B22S_C51315176.pdf

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