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quality Lead Free Zener Diode CBI BZT52B22 with Plastic Encapsulate SOD123 and 350mW Power Dissipation Rating factory
quality Lead Free Zener Diode CBI BZT52B22 with Plastic Encapsulate SOD123 and 350mW Power Dissipation Rating factory

Lead Free Zener Diode CBI BZT52B22 with Plastic Encapsulate SOD123 and 350mW Power Dissipation Rating

Key Attributes
Model Number: BZT52B22
Product Custom Attributes
Impedance(Zzt):
55Ω
Zener Voltage(Range):
21.56V~22.44V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
22V
Impedance(Zzk):
250Ω
Mfr. Part #:
BZT52B22
Package:
SOD-123
Product Description

Product Overview

This Zener Diode series features a planar die construction and 350mW power dissipation on a ceramic PCB, making it suitable for general-purpose, medium current applications. Ideally suited for automated assembly processes, these diodes are available in lead-free versions. They are designed for reliable performance in various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Packaging: Plastic Encapsulate Diodes (SOD-123)
  • Availability: Lead Free Version

Technical Specifications

Type Number Type Code Zener Voltage Range (Note 2) Nom(V) Zener Voltage Range (Note 2) Min(V) Zener Voltage Range (Note 2) Max(V) IZT @ IZT (mA) ZZT @ IZT () ZZK @ IZK () IR @ VR (A) Typical Temperature Coefficent @IZTC (mV/C) Forward Voltage (Note 2) @ IF = 10mA (V) Power Dissipation (Note 1) (mW)
BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.0 -3.5 0.9 350
BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.0 -3.5 0.9 350
BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.0 -3.5 0.9 350
BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 -3.5 0.9 350
BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 -3.5 0.9 350
BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 -3.5 0.9 350
BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 -3.5 0.9 350
BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 2.0 -3.5 0.9 350
BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 2.0 -2.7 0.9 350
BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 -2.0 0.9 350
BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 3.0 0.4 0.9 350
BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 2.0 1.2 0.9 350
BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 2.5 0.9 350
BZT52B8V2 2WD 8.2 8.04 8.36 5 15 80 0.7 3.2 0.9 350
BZT52B9V1 2WE 9.1 8.92 9.28 5 15 100 0.5 3.8 0.9 350
BZT52B10 2WF 10 9.80 10.20 5 20 150 0.2 4.5 0.9 350
BZT52B11 2WG 11 10.78 11.22 5 20 150 0.1 5.4 0.9 350
BZT52B12 2WH 12 11.76 12.24 5 25 150 0.1 6.0 0.9 350
BZT52B13 2WI 13 12.74 13.26 5 30 1170 0.1 7.0 0.9 350
BZT52B15 2WJ 15 14.70 15.30 5 30 200 0.1 9.2 0.9 350
BZT52B16 2WK 16 15.68 16.32 5 40 200 0.1 10.4 0.9 350
BZT52B18 2WL 18 17.64 18.36 5 45 225 0.1 12.4 0.9 350
BZT52B20 2WM 20 19.60 20.40 5 55 225 0.1 14.4 0.9 350
BZT52B22 2WN 22 21.56 22.44 5 55 250 0.1 16.4 0.9 350
BZT52B24 2WO 24 23.52 24.48 5 70 250 0.1 18.4 0.9 350
BZT52B27 2WP 27 26.46 27.54 2 80 300 0.5 21.4 0.9 350
BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.5 24.4 0.9 350
BZT52B33 2WR 33 32.34 33.66 2 80 325 0.5 27.4 0.9 350
BZT52B36 2WS 36 35.28 36.72 2 90 350 0.5 30.4 0.9 350
BZT52B39 2WT 39 38.22 39.78 2 130 350 0.5 33.4 0.9 350
BZT52B43 2WU 43 41.16 42.84 2 130 350 0.5 36.4 0.9 350

Package Outline (SOD-123)

Symbol Dimension in Millimeters (Min) Dimension in Millimeters (Max)
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Maximum Ratings (Ta=25C unless otherwise specified)

Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ IF = 10mA VF 0.9 V
Power Dissipation (Note 1) Pd 350 mW
Thermal Resistance from Junction to Ambient RJA 357 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

Notes:

  1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  2. Short duration test pulse used to minimize self-heating effect.
  3. f = 1kHz.

2410121341_CBI-BZT52B22_C21714230.pdf

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