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quality Stable Voltage Reference Silicon Planar Zener Diodes with 500 Milliwatt Power Dissipation CBI MM1Z15 factory
quality Stable Voltage Reference Silicon Planar Zener Diodes with 500 Milliwatt Power Dissipation CBI MM1Z15 factory

Stable Voltage Reference Silicon Planar Zener Diodes with 500 Milliwatt Power Dissipation CBI MM1Z15

Key Attributes
Model Number: MM1Z15
Product Custom Attributes
Impedance(Zzt):
40Ω
Zener Voltage(Range):
13.8V~15.6V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
15V
Mfr. Part #:
MM1Z15
Package:
SOD-123
Product Description

Product Overview

Silicon Planar Zener Diodes designed for surface-mounted applications, offering a total power dissipation of up to 500 mW. These diodes feature a tolerance of approximately 5% and are available in the compact SOD-123 package. They are suitable for various electronic circuits requiring stable voltage references.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Planar
  • Package Type: SOD-123
  • Tolerance: Approximately 5%

Technical Specifications

Type Marking Code Zener Voltage (VZ) (V) Test Current (IZ) (mA) Zener Voltage Tolerance (VZ) (V) Dynamic Impedance (ZZT) () at IZT Reverse Leakage Current (IR) (A) at VR Forward Voltage (VF) (V) at IF = 10 mA
MM1Z2V0 4A 2.0 5 1.8...2.15 100 at 5 mA 120 at 2V 0.5
MM1Z2V2 4B 2.2 5 2.08...2.33 100 at 5 mA 120 at 2.2V 0.7
MM1Z2V4 4C 2.4 5 2.28...2.56 100 at 5 mA 120 at 2.4V 1
MM1Z2V7 4D 2.7 5 2.5...2.9 110 at 5 mA 120 at 2.7V 1
MM1Z3V0 4E 3.0 5 2.8...3.2 120 at 5 mA 50 at 3V 1
MM1Z3V3 4F 3.3 5 3.1...3.5 130 at 5 mA 20 at 3.3V 1
MM1Z3V6 4H 3.6 5 3.4...3.8 130 at 5 mA 10 at 3.6V 1
MM1Z3V9 4J 3.9 5 3.7...4.1 130 at 5 mA 5 at 3.9V 1
MM1Z4V3 4K 4.3 5 4...4.6 130 at 5 mA 5 at 4.3V 1
MM1Z4V7 4M 4.7 5 4.4...5 130 at 5 mA 2 at 4.7V 1
MM1Z5V1 4N 5.1 5 4.8...5.4 130 at 5 mA 2 at 5.1V 1.5
MM1Z5V6 4P 5.6 5 5.2...6 80 at 5 mA 1 at 5.6V 2.5
MM1Z6V2 4R 6.2 5 5.8...6.6 50 at 5 mA 1 at 6.2V 3
MM1Z6V8 4X 6.8 5 6.4...7.2 30 at 5 mA 0.5 at 6.8V 3.5
MM1Z7V5 4Y 7.5 5 7...7.9 30 at 5 mA 0.5 at 7.5V 4
MM1Z8V2 4Z 8.2 5 7.7...8.7 30 at 5 mA 0.5 at 8.2V 5
MM1Z9V1 5A 9.1 5 8.5...9.6 30 at 5 mA 0.5 at 9.1V 6
MM1Z10 5B 10 5 9.4...10.6 30 at 5 mA 0.1 at 10V 7
MM1Z11 5C 11 5 10.4...11.6 30 at 5 mA 0.1 at 11V 8
MM1Z12 5D 12 5 11.4...12.7 35 at 5 mA 0.1 at 12V 9
MM1Z13 5E 13 5 12.4...14.1 35 at 5 mA 0.1 at 13V 10
MM1Z14 6J 14 5 13.2...14.9 35 at 5 mA 0.1 at 14V 10
MM1Z15 5F 15 5 13.8...15.6 40 at 5 mA 0.1 at 15V 11
MM1Z16 5H 16 5 15.3...17.1 40 at 5 mA 0.1 at 16V 12
MM1Z18 5J 18 5 16.8...19.1 45 at 5 mA 0.1 at 18V 13
MM1Z20 5K 20 5 18.8...21.2 50 at 5 mA 0.1 at 20V 15
MM1Z22 5M 22 5 20.8...23.3 55 at 5 mA 0.1 at 22V 17
MM1Z24 5N 24 5 22.8...25.6 60 at 5 mA 0.1 at 24V 19
MM1Z27 5P 27 2 25.1...28.9 70 at 2 mA 0.1 at 27V 21
MM1Z30 5R 30 2 28...32 80 at 2 mA 0.1 at 30V 23
MM1Z33 5X 33 2 31...35 80 at 2 mA 0.1 at 33V 25
MM1Z36 5Y 36 2 34...38 90 at 2 mA 0.1 at 36V 27
MM1Z39 5Z 39 2 37...41 100 at 2 mA 2 at 39V 30
MM1Z43 6A 43 2.5 40...46 130 at 2.5 mA 2 at 43V 33
MM1Z47 6B 47 2.5 44...50 150 at 2.5 mA 2 at 47V 36
MM1Z51 6C 51 2.5 48...54 180 at 2.5 mA 1 at 51V 39
MM1Z56 6D 56 2.5 52...60 180 at 2.5 mA 1 at 56V 43
MM1Z62 6E 62 2.5 58...66 200 at 2.5 mA 0.2 at 62V 47
MM1Z68 6F 68 2.5 64...72 250 at 2.5 mA 0.2 at 68V 52
MM1Z75 6H 75 2.5 70...79 300 at 2.5 mA 0.2 at 75V 57
Absolute Maximum Ratings (Ta = 25 C)
Parameter Symbol Value Unit
Power Dissipation Ptot 500 mW
Junction Temperature TJ 150 C
Storage Temperature Range TStg -55 to +150 C
Characteristics at Ta = 25 C
Parameter Symbol Max. Unit
Thermal Resistance Junction to Ambient Air RthA 340 C/W
Package Outline SOD-123 Dimensions
Symbol Dimension in Millimeters (Min - Max)
A 0.95 - 1.15
A1 0.01 - 0.100
B 1.55 - 1.65
bp 0.50 - 0.70
C 0.09 - 0.150
E 2.60 - 2.70
HE 3.45 - 3.85
Lp 0.20 - 0.45
0 - 5

Notes:
1) VZ is tested with pulses (20 ms).
2) ZZT is measured at IZT by given a very small A.C. current signal.


2410121321_CBI-MM1Z15_C21714152.pdf

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