Low threshold voltage Central CTLDM3590 TR N channel MOSFET in TLMTM leadless surface mount package
Key Attributes
Model Number:
CTLDM3590 TR
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
160mA
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Pd - Power Dissipation:
125mW
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
3pF
Gate Charge(Qg):
-
Mfr. Part #:
CTLDM3590 TR
Package:
XFDFN-3
Product Description
Product Overview
The CENTRAL SEMICONDUCTOR CTLDM3590 is an enhancement-mode N-channel silicon MOSFET designed for applications such as high-speed pulsed amplifiers and drivers. It features beneficial low on-resistance (rDS(ON)), low threshold voltage, and very low gate charge characteristics. This device is housed in an ultra-small, ultra-low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package and offers ESD protection up to 2kV.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Package Type: TLMTM leadless surface mount package (TLM3D6D8 CASE R3)
- Material: Silicon
- Certifications: ESD protection up to 2kV
Technical Specifications
| Symbol | Test Conditions | Min | Typ | Max | Units |
| VDS | Drain-Source Voltage | 20 | V | ||
| VGS | Gate-Source Voltage | 8.0 | V | ||
| ID | Continuous Drain Current (Steady State) | 160 | mA | ||
| ID | Pulsed Drain Current, tp=10s | 800 | mA | ||
| PD | Power Dissipation | 125 | mW | ||
| TJ, Tstg | Operating and Storage Junction Temperature | -65 | +150 | C | |
| JA | Thermal Resistance | 1000 | C/W | ||
| IGSSF, IGSSR | VGS=5.0V, VDS=0 | 100 | nA | ||
| IDSS | VDS=5.0V, VGS=0 | 50 | nA | ||
| IDSS | VDS=16V, VGS=0 | 100 | nA | ||
| BVDSS | VGS=0, ID=250A | 20 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 0.4 | 1.0 | V | |
| rDS(ON) | VGS=4.5V, ID=100mA | 1.5 | 3.0 | ||
| rDS(ON) | VGS=2.5V, ID=50mA | 2.0 | 4.0 | ||
| rDS(ON) | VGS=1.8V, ID=20mA | 3.0 | 6.0 | ||
| rDS(ON) | VGS=1.5V, ID=10mA | 4.0 | 10 | ||
| rDS(ON) | VGS=1.2V, ID=1.0mA | 7.0 | |||
| Qg(tot) | VDS=10V, VGS=4.5V, ID=100mA | 0.458 | nC | ||
| Qgs | VDS=10V, VGS=4.5V, ID=100mA | 0.176 | nC | ||
| Qgd | VDS=10V, VGS=4.5V, ID=100mA | 0.138 | nC | ||
| gFS | VDS=5.0V, ID=125mA | 1.3 | S | ||
| Crss | VDS=15V, VGS=0, f=1.0MHz | 2.2 | pF | ||
| Ciss | VDS=15V, VGS=0, f=1.0MHz | 9.0 | pF | ||
| Coss | VDS=15V, VGS=0, f=1.0MHz | 3.0 | pF | ||
| ton | VDD=10V, VGS=4.5V, ID=200mA | 25 | ns | ||
| toff | VDD=10V, VGS=4.5V, ID=200mA | 85 | ns |
2411220657_Central-CTLDM3590-TR_C19408838.pdf
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