General purpose medium current zener diode with planar die design and 350mW power dissipation CBI BZT52B6V8

Key Attributes
Model Number: BZT52B6V8
Product Custom Attributes
Impedance(Zzt):
15Ω
Pd - Power Dissipation:
350mW
Zener Voltage(Range):
6.66V~6.94V
Zener Voltage(Nom):
6.8V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52B6V8
Package:
SOD-123
Product Description

Product Overview

This Zener Diode features a planar die construction and 350mW power dissipation on a ceramic PCB, making it ideal for general-purpose, medium current applications. Designed for automated assembly processes, it is available in lead-free versions.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Packaging: Plastic-Encapsulate Diodes, SOD-123
  • Availability: Lead Free Version

Technical Specifications

Characteristic Symbol Value Unit Notes
Forward Voltage VF 0.9 V @ IF = 10mA (Note 2)
Power Dissipation Pd 350 mW (Note 1)
Thermal Resistance (Junction to Ambient) RJA 357 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150
Type Number Type Code Nominal Zener Voltage (V) Min Zener Voltage (V) Max Zener Voltage (V) Test Current (mA) Max Zener Impedance () Max Reverse Current (A) Typical Temperature Coefficient (mV/C) Notes
BZT52B2V4 2WX 2.4 2.35 2.45 5 600 50 -3.5 (Note 2, 3)
BZT52B2V7 2W1 2.7 2.65 2.75 5 600 20 -3.5 (Note 2, 3)
BZT52B3V0 2W2 3.0 2.94 3.06 5 600 10 -3.5 (Note 2, 3)
BZT52B3V3 2W3 3.3 3.23 3.37 5 600 5 -3.5 (Note 2, 3)
BZT52B3V6 2W4 3.6 3.53 3.67 5 600 5 -3.5 (Note 2, 3)
BZT52B3V9 2W5 3.9 3.82 3.98 5 600 3 -3.5 (Note 2, 3)
BZT52B4V3 2W6 4.3 4.21 4.39 5 600 3 -3.5 (Note 2, 3)
BZT52B4V7 2W7 4.7 4.61 4.79 5 500 3 -3.5 (Note 2, 3)
BZT52B5V1 2W8 5.1 5.00 5.20 5 480 2 -2.7 (Note 2, 3)
BZT52B5V6 2W9 5.6 5.49 5.71 5 400 1 -2.0 (Note 2, 3)
BZT52B6V2 2WA 6.2 6.08 6.32 5 150 3 0.4 (Note 2, 3)
BZT52B6V8 2WB 6.8 6.66 6.94 5 80 2 1.2 (Note 2, 3)
BZT52B7V5 2WC 7.5 7.35 7.65 5 80 1 2.5 (Note 2, 3)
BZT52B8V2 2WD 8.2 8.04 8.36 5 80 0.7 3.2 (Note 2, 3)
BZT52B9V1 2WE 9.1 8.92 9.28 5 100 0.5 3.8 (Note 2, 3)
BZT52B10 2WF 10 9.80 10.20 5 150 0.2 4.5 (Note 2, 3)
BZT52B11 2WG 11 10.78 11.22 5 150 0.1 5.4 (Note 2, 3)
BZT52B12 2WH 12 11.76 12.24 5 150 0.1 6.0 (Note 2, 3)
BZT52B13 2WI 13 12.74 13.26 5 170 0.1 7.0 (Note 2, 3)
BZT52B15 2WJ 15 14.70 15.30 5 200 0.1 9.2 (Note 2, 3)
BZT52B16 2WK 16 15.68 16.32 5 200 0.1 10.4 (Note 2, 3)
BZT52B18 2WL 18 17.64 18.36 5 225 0.1 12.4 (Note 2, 3)
BZT52B20 2WM 20 19.60 20.40 5 225 0.1 14.4 (Note 2, 3)
BZT52B22 2WN 22 21.56 22.44 5 250 0.1 16.4 (Note 2, 3)
BZT52B24 2WO 24 23.52 24.48 5 250 0.1 18.4 (Note 2, 3)
BZT52B27 2WP 27 26.46 27.54 2 300 0.1 21.4 (Note 2, 3)
BZT52B30 2WQ 30 29.40 30.60 2 300 0.1 24.4 (Note 2, 3)
BZT52B33 2WR 33 32.34 33.66 2 325 0.1 27.4 (Note 2, 3)
BZT52B36 2WS 36 35.28 36.72 2 350 0.1 30.4 (Note 2, 3)
BZT52B39 2WT 39 38.22 39.78 2 350 0.1 33.4 (Note 2, 3)
BZT52B43 2WU 43 41.16 42.84 2 350 0.1 36.4 (Note 2, 3)
Symbol Dimension (mm) Min Dimension (mm) Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:

  1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  2. Short duration test pulse used to minimize self-heating effect.
  3. f = 1kHz.

2410121340_CBI-BZT52B6V8_C21714219.pdf

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