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quality Power MOSFET CET Chino Excel Tech CEU4060A N Channel Transistor with TO 251 and TO 252 Package Types factory
quality Power MOSFET CET Chino Excel Tech CEU4060A N Channel Transistor with TO 251 and TO 252 Package Types factory

Power MOSFET CET Chino Excel Tech CEU4060A N Channel Transistor with TO 251 and TO 252 Package Types

Key Attributes
Model Number: CEU4060A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
85mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
38W
Gate Charge(Qg):
10.5nC@10V
Mfr. Part #:
CEU4060A
Package:
TO-252-2(DPAK)
Product Description

Product Overview

The CED4060A/CEU4060A is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) of 85m at VGS = 10V, along with high power and current handling capabilities. This transistor is available in TO-251 (I-PAK) and TO-252 (D-PAK) packages.

Product Attributes

  • Brand: CET (implied by domain cetsemi.com)
  • Product Line: CED4060A/CEU4060A
  • Package Types: TO-251 (I-PAK), TO-252 (D-PAK)
  • Lead Free Product: Yes

Technical Specifications

Parameter Symbol Min Typ Max Units Test Condition
ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 38 A
Drain Current-Pulsed IDM 45 A a
Maximum Power Dissipation @ TC = 25C PD 15 W
Derate above 25C 0.25 W/C
Operating and Store Temperature Range TJ, Tstg -55 175 C
Thermal Characteristics
Thermal Resistance, Junction-to-Case RJC 50 C/W
Thermal Resistance, Junction-to-Ambient RJA 4 C/W
Electrical Characteristics (Tc = 25C unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 60V, VGS = 0V
Gate Body Leakage Current, Forward IGSFF 100 nA VGS = 20V, VDS = 0V
Gate Body Leakage Current, Reverse IGSGR -100 nA VGS = -20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2.7 4 V VGS = VDS, ID = 250A
Static Drain-Source On-Resistance RDS(on) 85 m VGS = 10V, ID = 7.5A
Forward Transconductance gFS 2.2 S VDS = 10V, ID = 7.5A
Input Capacitance Ciss 410 pF VDS = 60V, VGS = 0V, f = 1.0 MHz
Reverse Transfer Capacitance Coss 115 pF
Output Capacitance Crss 20 pF
Turn-On Delay Time td(on) 12.4 ns VDD = 30V, ID = 15A, VGS = 10V, RGEN = 25
Turn-On Rise Time tr 24 ns
Turn-Off Delay Time td(off) 6 ns VDS = 48V, ID = 15A, VGS = 10V
Turn-Off Fall Time tf 24.8 ns
Total Gate Charge Qg 48 nC VDS = 25V, VGS = 0V, f = 1.0 MHz
Gate-Source Charge Qgs 12 nC
Gate-Drain Charge Qgd 8.1 nC
Drain-Source Diode Forward Current IS 15 A b
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 7.5A

Notes:
a. Repetitive Rating: Pulse width limited by maximum junction temperature.
b. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%.
c. Guaranteed by design, not subject to production testing.


2410122025_CET-Chino-Excel-Tech-CEU4060A_C154370.pdf

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