86--136 6733 2386
quality 20 Volt 2.8 Amp N Channel MOSFET Plastic Encapsulated SOT 523 Package CBI BC2302T 2.8A factory
quality 20 Volt 2.8 Amp N Channel MOSFET Plastic Encapsulated SOT 523 Package CBI BC2302T 2.8A factory

20 Volt 2.8 Amp N Channel MOSFET Plastic Encapsulated SOT 523 Package CBI BC2302T 2.8A

Key Attributes
Model Number: BC2302T-2.8A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
115mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@50uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Mfr. Part #:
BC2302T-2.8A
Package:
SOT-523
Product Description

Product Overview

This N-Channel, 20-V (D-S) TrenchFET Power MOSFET, designed for portable devices and DC/DC converters, offers efficient load switching. It features a SOT-523 plastic-encapsulated package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: N-Channel MOSFET
  • Encapsulation: Plastic-Encapsulate
  • Package Type: SOT-523

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current ID 2.8 A
Continuous Source-Drain Current (Diode Conduction) IS 0.6 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (t≤5s) RθJA 357 °C/W
Operating Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 +150 °C
Electrical Characteristics (Ta=25°C unless otherwise noted)
Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20 V
Gate-threshold voltage VGS(th) VDS =VGS, ID =50µA 0.65 0.95 1.2 V
Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA
Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA
Drain-source on-resistance rDS(on)a VGS =4.5V, ID =2.8A 0.045 0.060 Ω
VGS =2.5V, ID =2.0A 0.070 0.115 Ω
Forward transconductance gfsa VDS =5V, ID =2.0A 8 S
Diode forward voltage VSD IS=0.94A,VGS=0V 0.76 1.2 V
Package Outline Dimensions (Unit: Millimeters)
Symbol Dimension Min Max
A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
θ 0° 5°

Notes:

  • a. Pulse Test: Pulse width≤300µs, duty cycle ≤2%.
  • b. These parameters have no way to verify.

2410121636_CBI-BC2302T-2-8A_C21714182.pdf

Related Products
quality complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities factory
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy factory
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.