Plastic Encapsulated Zener Diode CBI BZT52B20S Medium Current Planar Die Construction Lead Free Version

Key Attributes
Model Number: BZT52B20S
Product Custom Attributes
Mfr. Part #:
BZT52B20S
Package:
SOD-323
Product Description

Product Overview

The BZT52BXXXS series of plastic-encapsulated Zener diodes are designed for general-purpose applications requiring medium current. Featuring a planar die construction, these diodes are ideally suited for automated assembly processes and are available in lead-free versions. They offer a wide range of Zener voltage options for precise voltage regulation.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Zener Diode
  • Encapsulation: Plastic
  • Die Construction: Planar
  • Availability: Lead Free Version

Technical Specifications

Type Number Type Code Nominal Zener Voltage (V) (VZ@IZT) Minimum Zener Voltage (V) Maximum Zener Voltage (V) Test Current (mA) (IZT) Maximum Zener Impedance () (ZZT@IZK) Maximum Reverse Current (A) (IR) Typical Temperature Coefficient (mV/C) Forward Voltage (V) (VF @ IF = 10mA) Power Dissipation (mW) (Pd) Thermal Resistance (C/W) (RJA) Junction Temperature (C) (Tj) Storage Temperature Range (C) (Tstg)
BZT52B2V4S 2WX 2.4 2.35 2.45 5 600 50 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B2V7S 2W1 2.7 2.65 2.75 5 600 20 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V0S 2W2 3.0 2.94 3.06 5 600 10 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V3S 2W3 3.3 3.23 3.37 5 600 5 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V6S 2W4 3.6 3.53 3.67 5 600 5 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V9S 2W5 3.9 3.82 3.98 5 600 3 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B4V3S 2W6 4.3 4.21 4.39 5 600 3 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B4V7S 2W7 4.7 4.61 4.79 5 500 3 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B5V1S 2W8 5.1 5.00 5.20 5 480 2 -2.7 0.9 200 625 150 -55 ~ +150
BZT52B5V6S 2W9 5.6 5.49 5.71 5 400 1 -2.0 0.9 200 625 150 -55 ~ +150
BZT52B6V2S 2WA 6.2 6.08 6.32 5 150 3 0.4 0.9 200 625 150 -55 ~ +150
BZT52B6V8S 2WB 6.8 6.66 6.94 5 80 2 1.2 0.9 200 625 150 -55 ~ +150
BZT52B7V5S 2WC 7.5 7.35 7.65 5 80 1 2.5 0.9 200 625 150 -55 ~ +150
BZT52B8V2S 2WD 8.2 8.04 8.36 5 80 0.7 3.2 0.9 200 625 150 -55 ~ +150
BZT52B9V1S 2WE 9.1 8.92 9.28 5 100 0.5 3.8 0.9 200 625 150 -55 ~ +150
BZT52B10S 2WF 10 9.80 10.20 5 150 0.2 4.5 0.9 200 625 150 -55 ~ +150
BZT52B11S 2WG 11 10.78 11.22 5 150 0.1 5.4 0.9 200 625 150 -55 ~ +150
BZT52B12S 2WH 12 11.76 12.24 5 150 0.1 6.0 0.9 200 625 150 -55 ~ +150
BZT52B13S 2WI 13 12.74 13.26 5 170 0.1 7.0 0.9 200 625 150 -55 ~ +150
BZT52B15S 2WJ 15 14.70 15.30 5 200 0.1 9.2 0.9 200 625 150 -55 ~ +150
BZT52B16S 2WK 16 15.68 16.32 5 200 0.1 10.4 0.9 200 625 150 -55 ~ +150
BZT52B18S 2WL 18 17.64 18.36 5 225 0.1 12.4 0.9 200 625 150 -55 ~ +150
BZT52B20S 2WM 20 19.60 20.40 5 225 0.1 14.4 0.9 200 625 1-55 ~ +150
BZT52B22S 2WN 22 21.56 22.44 5 250 0.1 16.4 0.9 200 625 150 -55 ~ +150
BZT52B24S 2WO 24 23.52 24.48 5 250 0.1 18.4 0.9 200 625 150 -55 ~ +150
BZT52B27S 2WP 27 26.46 27.54 2 300 0.1 21.4 0.9 200 625 150 -55 ~ +150
BZT52B30S 2WQ 30 29.40 30.60 2 300 0.1 24.4 0.9 200 625 150 -55 ~ +150
BZT52B33S 2WR 33 32.34 33.66 2 325 0.1 27.4 0.9 200 625 150 -55 ~ +150
BZT52B36S 2WS 36 35.28 36.72 2 350 0.1 30.4 0.9 200 625 150 -55 ~ +150
BZT52B39S 2WT 39 38.22 39.78 2 350 0.1 33.4 0.9 200 625 150 -55 ~ +150

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. Test frequency f = 1kHz.
  • The company currently provides 5.1 V - 20 V products only.

2510101615_CBI-BZT52B20S_C51315175.pdf

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