Low Input Capacitance N Channel Enhancement Mode Transistor CBI 2N7002K SOT 23 Package ESD Protected
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor offers low on-resistance (RDS(ON)) and a low gate threshold voltage. It features low input capacitance and is ESD protected up to 2KV. Designed for various electronic applications, it is housed in a SOT-23 Plastic Package.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Transistor Type: N-Channel Enhancement Mode Field Effect Transistor
- ESD Protection: Up to 2KV
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit | Conditions |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Drain-Source Voltage | VDSS | - | 60 | V | - |
| Gate-Source Voltage | VGSS | - | 20 | V | - |
| Drain Current (Continuous) | ID | - | 300 | mA | - |
| Drain Current (Pulse Width 10 s) | IDM | - | 800 | mA | - |
| Total Power Dissipation | Ptot | - | 350 | mW | - |
| Operating and Storage Temperature Range | Tj, Tstg | -55 | 150 | C | - |
| Characteristics (Ta = 25 C) | |||||
| Drain Source Breakdown Voltage | BVDSS | 60 | - | V | ID = 10 A |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | A | VDS = 60 V |
| Gate Source Leakage Current | IGSS | - | 10 | A | VGS = 20 V |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = 10 V, ID = 250 A |
| Static Drain Source On-Resistance | RDS(ON) | - | - | VGS = 10 V, ID = 500 mA | |
| VGS = 4.5 V, ID = 200 mA | |||||
| Forward Transconductance | gfs | 80 | - | mS | VDS = 10 V, ID = 200 mA |
| Input Capacitance | Ciss | - | 50 | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | - | 25 | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 5 | pF | VDS = 25 V, f = 1 MHz |
2510131755_CBI-2N7002K_C51315012.pdf
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