voltage regulation with compact CBI BZX84C30 silicon planar zener diode in space constrained designs

Key Attributes
Model Number: BZX84C30
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
28V~32V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
30V
Mfr. Part #:
BZX84C30
Package:
SOT-23
Product Description

Product Overview

The BZX84CSeries Silicon Planar Zener Diodes are designed for voltage regulation in compact applications. Offered in the SOT-23 surface mount plastic package, these diodes are ideal for space-constrained designs such as cellular phones, hand-held portables, and high-density PC boards. They provide reliable voltage regulation with minimal space requirements.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Diode Type: Silicon Planar Zener Diodes

Technical Specifications

Model Type Marking Code Zener Voltage (Nominal, V) Zener Voltage (Min, V) Zener Voltage (Max, V) Zener Current (IZT, mA) Dynamic Impedance (ZZT at IZT, ) Reverse Current (IR at VR, A) Forward Voltage (VF at IF=10mA, V)
BZX84C2V0 A8 2.0 1.8 2.15 5 100 120 0.5
BZX84C2V2 B8 2.2 2.08 2.33 5 100 120 0.7
BZX84C2V4 C8 2.4 2.2 2.6 5 100 50 1
BZX84C2V7 D8 2.7 2.5 2.9 5 100 20 1
BZX84C3V0 E8 3.0 2.8 3.2 5 95 10 1
BZX84C3V3 F8 3.3 3.1 3.5 5 95 5 1
BZX84C3V6 H8 3.6 3.4 3.8 5 90 5 1
BZX84C3V9 J8 3.9 3.7 4.1 5 90 3 1
BZX84C4V3 K8 4.3 4.0 4.6 5 90 3 1
BZX84C4V7 M8 4.7 4.4 5.0 5 80 3 2
BZX84C5V1 N8 5.1 4.8 5.4 5 60 2 2
BZX84C5V6 P8 5.6 5.2 6.0 5 40 1 2
BZX84C6V2 R8 6.2 5.8 6.6 5 10 3 4
BZX84C6V8 X8 6.8 6.4 7.2 5 15 2 4
BZX84C7V5 Y8 7.5 7.0 7.9 5 15 1 5
BZX84C8V2 Z8 8.2 7.7 8.7 5 15 0.7 5
BZX84C9V1 A9 9.1 8.5 9.6 5 15 0.5 6
BZX84C10 B9 10 9.4 10.6 5 20 0.2 7
BZX84C11 C9 11 10.4 11.6 5 20 0.1 8
BZX84C12 D9 12 11.4 12.7 5 25 0.1 8
BZX84C13 E9 13 12.4 14.1 5 30 0.1 8
BZX84C15 F9 15 13.8 15.6 5 30 0.05 10.5
BZX84C16 H9 16 15.3 17.1 5 40 0.05 11.2
BZX84C18 J9 18 16.8 19.1 5 45 0.05 12.6
BZX84C20 K9 20 18.8 21.2 5 55 0.05 14
BZX84C22 M9 22 20.8 23.3 5 55 0.05 15.4
BZX84C24 N9 24 22.8 25.6 5 70 0.05 16.8
BZX84C27 P9 27 25.1 28.9 2 80 0.05 18.9
BZX84C30 R9 30 28 32 2 80 0.05 21
BZX84C33 X9 33 31 35 2 80 0.05 23.1
BZX84C36 Y9 36 34 38 2 90 0.05 25.2
BZX84C39 Z9 39 37 41 2 130 0.05 27.3
BZX84C43 A0 43 40 46 2 150 0.05 30.1
BZX84C47 B0 47 44 50 2 170 0.05 32.9
BZX84C51 C0 51 48 54 2 180 0.05 35.7
BZX84C56 D0 56 52 60 2 200 0.05 39.2
BZX84C62 E0 62 58 66 2 215 0.05 43.4
BZX84C68 F0 68 64 72 2 240 0.05 47.6
BZX84C75 H0 75 70 79 2 255 0.05 52.5
Parameter Symbol Value Unit
Power Dissipation PD 350 mW
Thermal Resistance, Junction to Ambient RJA 417 C/W
Junction and Storage Temperature Range Tj, Tstg -65 to +150 C

Note: Thermal Resistance RJA is measured on Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. Zener voltage is tested with pulses tp = 20 ms.


2410121234_CBI-BZX84C30_C2832565.pdf

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