Fast switching speeds and low on resistance in CBI BC1012W N Channel Enhancement Mode MOSFET device
Key Attributes
Model Number:
BC1012W
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
630mA
RDS(on):
400mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.37pF
Pd - Power Dissipation:
280mW
Output Capacitance(Coss):
9.68pF
Input Capacitance(Ciss):
60.67pF
Gate Charge(Qg):
736.6pC@4.5V
Mfr. Part #:
BC1012W
Package:
SOT-323
Product Description
Product Overview
This N-Channel Enhancement Mode MOSFET is designed for efficient power switching applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits. The device offers low input/output leakage and is ESD protected up to 2kV. It is Lead Free By Design and RoHS Compliant.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Certifications: RoHS Compliant
- Package Type: SOT-323 (Plastic surface mounted package; 3 leads)
- ESD Protection: Up to 2kV
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 20 | V | @TA = 25C unless otherwise specified |
| Gate-Source Voltage | VGSS | 6 | V | @TA = 25C unless otherwise specified |
| Continuous Drain Current (Steady State) | ID | 0.63 (TA = 25C), 0.45 (TA = 85C) | A | Note 1 |
| Pulsed Drain Current | IDM | 6 | A | @TA = 25C unless otherwise specified |
| Thermal Characteristics | ||||
| Total Power Dissipation | PD | 0.28 | W | Note 1 |
| Thermal Resistance, Junction to Ambient | RJA | 452 | C/W | @TA = 25C unless otherwise specified |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | @TA = 25C unless otherwise specified |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A (Note 4) |
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS = 20V, VGS = 0V (TJ = 25C) (Note 4) |
| Gate-Source Leakage | IGSS | 1.0 | A | VGS = 4.5V, VDS = 0V (Note 4) |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.0 | V | VDS = VGS, ID = 250A (Note 4) |
| Static Drain-Source On-Resistance | RDS (ON) | 0.3 - 0.4 | VGS = 4.5V, ID = 600mA (Note 4) | |
| Static Drain-Source On-Resistance | RDS (ON) | 0.4 - 0.5 | VGS = 2.5V, ID = 500mA (Note 4) | |
| Static Drain-Source On-Resistance | RDS (ON) | 0.5 - 0.7 | VGS = 1.8V, ID = 350mA (Note 4) | |
| Forward Transfer Admittance | |Yfs| | 1.4 | S | VDS = 10V, ID = 400mA (Note 4) |
| Diode Forward Voltage | VSD | 0.7 - 1.2 | V | VGS = 0V, IS = 150mA (Note 4) |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | 60.67 | pF | VDS =16V, VGS = 0V, f = 1.0MHz (Note 4) |
| Output Capacitance | Coss | 9.68 | pF | VDS =16V, VGS = 0V, f = 1.0MHz (Note 4) |
| Reverse Transfer Capacitance | Crss | 5.37 | pF | VDS =16V, VGS = 0V, f = 1.0MHz (Note 4) |
| Total Gate Charge | Qg | 736.6 | pC | VGS =4.5V, VDS = 10V, ID =250mA (Note 4) |
| Gate-Source Charge | Qgs | 93.6 | pC | VGS =4.5V, VDS = 10V, ID =250mA (Note 4) |
| Gate-Drain Charge | Qgd | 116.6 | pC | VGS =4.5V, VDS = 10V, ID =250mA (Note 4) |
| Turn-On Delay Time | tD(on) | 5.1 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA (Note 4) |
| Turn-On Rise Time | tr | 7.4 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA (Note 4) |
| Turn-Off Delay Time | tD(off) | 26.7 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA (Note 4) |
| Turn-Off Fall Time | tf | 12.3 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA (Note 4) |
| Package Outline (SOT-323) | ||||
| Symbol | Dimension | Min | Max | Units |
| A | Overall Height | 0.90 | 1.00 | mm |
| A1 | Height variation | 0.010 | 0.100 | mm |
| B | Width | 1.20 | 1.40 | mm |
| bp | Footprint | 0.25 | 0.45 | mm |
| C | Thickness | 0.09 | 0.15 | mm |
| D | Length | 2.00 | 2.20 | mm |
| E | Width | 1.15 | 1.35 | mm |
| HE | Overall Width | 2.15 | 2.55 | mm |
| Lp | Lead Pitch | 0.25 | 0.46 | mm |
| Angle | 0 | 6 | ||
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
2410121737_CBI-BC1012W_C21714105.pdf
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