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quality Plastic Encapsulated Zener Diode CBI BZT52C5V6S SOD323 Package Medium Current 200mW Power Dissipation factory
quality Plastic Encapsulated Zener Diode CBI BZT52C5V6S SOD323 Package Medium Current 200mW Power Dissipation factory

Plastic Encapsulated Zener Diode CBI BZT52C5V6S SOD323 Package Medium Current 200mW Power Dissipation

Key Attributes
Model Number: BZT52C5V6S
Product Custom Attributes
Impedance(Zzt):
40Ω
Diode Configuration:
Independent
Zener Voltage(Range):
5.2V~6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
5.6V
Impedance(Zzk):
400Ω
Mfr. Part #:
BZT52C5V6S
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general-purpose, medium-current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version and come in a compact SOD-323 package.

Product Attributes

  • Package: SOD-323
  • Construction: Planar die
  • Encapsulation: Plastic
  • Availability: Lead-free version

Technical Specifications

Model Marking Zener Voltage (Nominal) Vz @ Izt (V) Zener Voltage (Min) Vz @ Izt (V) Zener Voltage (Max) Vz @ Izt (V) Test Current Izt (mA) Max Zener Impedance Zzt @ Izt () Max Reverse Current IzK @ VR (A) Forward Voltage VF @ IF = 10mA (V) Power Dissipation PD (mW) Junction Temperature Tj (C) Storage Temperature Tstg (C) Thermal Resistance RJA (C/W)
BZT52C2V4S WX 2.4 2.20 2.60 5 100 50 0.9 200 150 -55~+150 625
BZT52C2V7S W1 2.7 2.5 2.9 5 100 20 0.9 200 150 -55~+150 625
BZT52C3V0S W2 3.0 2.8 3.2 5 95 10 0.9 200 150 -55~+150 625
BZT52C3V3S W3 3.3 3.1 3.5 5 95 5 0.9 200 150 -55~+150 625
BZT52C3V6S W4 3.6 3.4 3.8 5 90 5 0.9 200 150 -55~+150 625
BZT52C3V9S W5 3.9 3.7 4.1 5 90 3 0.9 200 150 -55~+150 625
BZT52C4V3S W6 4.3 4.0 4.6 5 90 3 0.9 200 150 -55~+150 625
BZT52C4V7S W7 4.7 4.4 5.0 5 80 3 0.9 200 150 -55~+150 625
BZT52C5V1S W8 5.1 4.8 5.4 5 60 2 0.9 200 150 -55~+150 625
BZT52C5V6S W9 5.6 5.2 6.0 5 40 1 0.9 200 150 -55~+150 625
BZT52C6V2S WA 6.2 5.8 6.6 5 10 3 0.9 200 150 -55~+150 625
BZT52C6V8S WB 6.8 6.4 7.2 5 15 2 0.9 200 150 -55~+150 625
BZT52C7V5S WC 7.5 7.0 7.9 5 15 1 0.9 200 150 -55~+150 625
BZT52C8V2S WD 8.2 7.7 8.7 5 15 0.7 0.9 200 150 -55~+150 625
BZT52C9V1S WE 9.1 8.5 9.6 5 15 0.5 0.9 200 150 -55~+150 625
BZT52C10S WF 10 9.4 10.6 5 20 0.2 0.9 200 150 -55~+150 625
BZT52C11S WG 11 10.4 11.6 5 20 0.1 0.9 200 150 -55~+150 625
BZT52C12S WH 12 11.4 12.7 5 25 0.1 0.9 200 150 -55~+150 625
BZT52C13S WI 13 12.4 14.1 5 30 0.1 0.9 200 150 -55~+150 625
BZT52C15S WJ 15 13.8 15.6 5 30 0.1 0.9 200 150 -55~+150 625
BZT52C16S WK 16 15.3 17.1 5 40 0.1 0.9 200 150 -55~+150 625
BZT52C18S WL 18 16.8 19.1 5 45 0.1 0.9 200 150 -55~+150 625
BZT52C20S WM 20 18.8 21.2 5 55 0.1 0.9 200 150 -55~+150 625
BZT52C22S WN 22 20.8 23.3 5 55 0.1 0.9 200 150 -55~+150 625
BZT52C24S WO 24 22.8 25.6 5 70 0.1 0.9 200 150 -55~+150 625
BZT52C27S WP 27 25.1 28.9 2 80 0.1 0.9 200 150 -55~+150 625
BZT52C30S WQ 30 28.0 32.0 2 80 0.1 0.9 200 150 -55~+150 625
BZT52C33S WR 33 31.0 35.0 2 80 0.1 0.9 200 150 -55~+150 625
BZT52C36S WS 36 34.0 38.0 2 90 0.1 0.9 200 150 -55~+150 625
BZT52C39S WT 39 37.0 41.0 2 130 0.1 0.9 200 150 -55~+150 625

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.


2410121326_CBI-BZT52C5V6S_C2886368.pdf

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