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quality Plastic Encapsulated Zener Diode CBI BZX584C5V1 with Planar Die Construction and Voltage Regulation factory
quality Plastic Encapsulated Zener Diode CBI BZX584C5V1 with Planar Die Construction and Voltage Regulation factory

Plastic Encapsulated Zener Diode CBI BZX584C5V1 with Planar Die Construction and Voltage Regulation

Key Attributes
Model Number: BZX584C5V1
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
60Ω
Zener Voltage(Range):
4.8V~5.4V
Pd - Power Dissipation:
150mW
Zener Voltage(Nom):
5.1V
Impedance(Zzk):
480Ω
Mfr. Part #:
BZX584C5V1
Package:
SOD-523
Product Description

Product Overview

The Plastic-Encapsulate Zener Diode offers reliable voltage regulation with a planar die construction and a power dissipation of 100mW. Available in Zener voltages ranging from 2.4V to 75V, these diodes are suitable for a variety of electronic applications requiring stable reference voltages. The device features a compact SOD-523 package for surface mounting, ensuring compatibility with modern PCB designs.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOD-523
  • Construction: Planar Die

Technical Specifications

Type Number Type Code Zener Voltage Range (Note 2) Nom(V) Zener Voltage Range (Note 2) Min(V) Zener Voltage Range (Note 2) Max(V) Test Current (IZT) (mA) Maximum Zener Impedance (ZZT@IZT) () Maximum Zener Impedance (ZZK@IZK) () Maximum Reverse Current (IR) (uA) Reverse Voltage (VR) (V)
BZX584C2V4 Z11 2.4 2.20 2.60 5 100 600 1.0 50
BZX584C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20
BZX584C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10
BZX584C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5
BZX584C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5
BZX584C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3
BZX584C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3
BZX584C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3
BZX584C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2
BZX584C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1
BZX584C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3
BZX584C6V8 Z5 6.8 6.4 7.2 5 15 80 1.0 2
BZX584C7V5 Z6 7.5 7.0 7.9 5 15 80 1.0 1
BZX584C8V2 Z7 8.2 7.7 8.7 5 15 80 1.0 0.7
BZX584C9V1 Z8 9.1 8.5 9.6 5 15 100 1.0 0.5
BZX584C10 Z9 10 9.4 10.6 5 20 150 1.0 0.2
BZX584C11 Y1 11 10.4 11.6 5 20 150 1.0 0.1
BZX584C12 Y2 12 11.4 12.7 5 25 150 1.0 0.1
BZX584C13 Y3 13 12.4 14.1 5 30 170 1.0 0.1
BZX584C15 Y4 15 13.8 15.6 5 30 200 1.0 0.1
BZX584C16 Y5 16 15.3 17.1 5 40 200 1.0 0.1
BZX584C18 Y6 18 16.8 19.1 5 45 225 1.0 0.1
BZX584C20 Y7 20 18.8 21.2 5 55 225 1.0 0.1
BZX584C22 Y8 22 20.8 23.3 5 55 250 1.0 0.1
BZX584C24 Y9 24 22.8 25.6 5 70 250 1.0 0.1
BZX584C27 Y10 27 25.1 28.9 2 80 300 0.5 0.1
BZX584C30 Y11 30 28.0 32.0 2 80 300 0.5 0.1
BZX584C33 Y12 33 31.0 35.0 2 80 325 0.5 0.1
BZX584C36 Y13 36 34.0 38.0 2 90 350 0.5 0.1
BZX584C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1
BZX584C43 Y15 43 40 46 2.5 130 500 1 2
BZX584C47 Y16 47 44 50 2.5 150 500 1 2
BZX584C51 Y17 51 48 54 2.5 180 500 1 1
BZX584C56 Y18 56 52 60 2.5 180 500 1 1
BZX584C62 Y19 62 58 66 2.5 200 500 1 0.2
BZX584C68 Y20 68 64 72 2.5 250 500 1 0.2
BZX584C75 Y21 75 70 79 2.5 300 500 1 0.2
Maximum Ratings (Ta=25C unless otherwise specified)
Characteristic Symbol Value Unit
Forward Voltage @IF=10mA VF 0.9 V
Power Dissipation PD 150 mW
Thermal Resistance, Junction to Ambient Air R JA 625 C/w
Operating and Storage Temperature Range Tj ,TSTG -65 ~ +150 C
Package Outline SOD-523
Symbol Dimension in Millimeters Min Max
A 0.60 0.70
A1 0 0.05
B 0.75 0.85
bp 0.25 0.40
C 0.09 0.15
E 1.15 1.25
HE 1.50 1.70

Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms, pulse width =300us.
3. f = 1KHZ


2403071510_CBI-BZX584C5V1_C21714241.pdf

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