Electronic Circuit Zener Diodes CBI MM1Z18 Silicon Planar with 5 Percent Tolerance and 500 Milliwatt Power Dissipation
Key Attributes
Model Number:
MM1Z18
Product Custom Attributes
Mfr. Part #:
MM1Z18
Package:
SOD-123
Product Description
Product Overview
Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a total power dissipation of up to 500 mW and are available with a tolerance of approximately 5%. Suitable for various electronic circuits requiring stable voltage references.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Silicon Planar
- Package Type: SOD-123
Technical Specifications
| Model | Marking Code | Zener Voltage (VZ) (V) | Tolerance ( %) | Test Current (IZ) (mA) | Max. Reverse Leakage Current (A) | Forward Voltage (VF) (V) | Dynamic Impedance (ZZT) () |
|---|---|---|---|---|---|---|---|
| MM1Z2V0 | 4A | 2.0 | 5 | 100 | 0.5 | 1.8...2.15 | 120 |
| MM1Z2V2 | 4B | 2.2 | 5 | 100 | 0.7 | 2.08...2.33 | 120 |
| MM1Z2V4 | 4C | 2.4 | 5 | 100 | 1 | 2.28...2.56 | 120 |
| MM1Z2V7 | 4D | 2.7 | 5 | 100 | 1 | 2.5...2.9 | 110 |
| MM1Z3V0 | 4E | 3.0 | 5 | 120 | 1 | 2.8...3.2 | 50 |
| MM1Z3V3 | 4F | 3.3 | 5 | 130 | 1 | 3.1...3.5 | 20 |
| MM1Z3V6 | 4H | 3.6 | 5 | 130 | 1 | 3.4...3.8 | 10 |
| MM1Z3V9 | 4J | 3.9 | 5 | 130 | 1 | 3.7...4.1 | 5 |
| MM1Z4V3 | 4K | 4.3 | 5 | 130 | 1 | 4...4.6 | 5 |
| MM1Z4V7 | 4M | 4.7 | 5 | 130 | 1 | 4.4...5 | 2 |
| MM1Z5V1 | 4N | 5.1 | 5 | 130 | 1.5 | 4.8...5.4 | 2 |
| MM1Z5V6 | 4P | 5.6 | 5 | 80 | 2.5 | 5.2...6 | 1 |
| MM1Z6V2 | 4R | 6.2 | 5 | 50 | 3 | 5.8...6.6 | 1 |
| MM1Z6V8 | 4X | 6.8 | 5 | 30 | 3.5 | 6.4...7.2 | 0.5 |
| MM1Z7V5 | 4Y | 7.5 | 5 | 30 | 4 | 7...7.9 | 0.5 |
| MM1Z8V2 | 4Z | 8.2 | 5 | 30 | 5 | 7.7...8.7 | 0.5 |
| MM1Z9V1 | 5A | 9.1 | 5 | 30 | 6 | 8.5...9.6 | 0.5 |
| MM1Z10 | 5B | 10 | 5 | 30 | 7 | 9.4...10.6 | 0.1 |
| MM1Z11 | 5C | 11 | 5 | 30 | 8 | 10.4...11.6 | 0.1 |
| MM1Z12 | 5D | 12 | 5 | 35 | 9 | 11.4...12.7 | 0.1 |
| MM1Z13 | 5E | 13 | 5 | 35 | 10 | 12.4...14.1 | 0.1 |
| MM1Z14 | 6J | 14 | 5 | 35 | 10 | 13.2...14.9 | 0.1 |
| MM1Z15 | 5F | 15 | 5 | 40 | 11 | 13.8...15.6 | 0.1 |
| MM1Z16 | 5H | 16 | 5 | 40 | 12 | 15.3...17.1 | 0.1 |
| MM1Z18 | 5J | 18 | 5 | 45 | 13 | 16.8...19.1 | 0.1 |
| MM1Z20 | 5K | 20 | 5 | 50 | 15 | 18.8...21.2 | 0.1 |
| MM1Z22 | 5M | 22 | 5 | 55 | 17 | 20.8...23.3 | 0.1 |
| MM1Z24 | 5N | 24 | 5 | 60 | 19 | 22.8...25.6 | 0.1 |
| MM1Z27 | 5P | 27 | 5 | 70 | 21 | 25.1...28.9 | 0.1 |
| MM1Z30 | 5R | 30 | 5 | 80 | 23 | 28...32 | 0.1 |
| MM1Z33 | 5X | 33 | 5 | 80 | 25 | 31...35 | 0.1 |
| MM1Z36 | 5Y | 36 | 5 | 90 | 27 | 34...38 | 0.1 |
| MM1Z39 | 5Z | 39 | 2.5 | 100 | 30 | 37...41 | 2 |
| MM1Z43 | 6A | 43 | 2.5 | 130 | 33 | 40...46 | 2 |
| MM1Z47 | 6B | 47 | 2.5 | 150 | 36 | 44...50 | 2 |
| MM1Z51 | 6C | 51 | 2.5 | 180 | 39 | 48...54 | 1 |
| MM1Z56 | 6D | 56 | 2.5 | 180 | 43 | 52...60 | 1 |
| MM1Z62 | 6E | 62 | 2.5 | 200 | 47 | 58...66 | 0.2 |
| MM1Z68 | 6F | 68 | 2.5 | 250 | 52 | 64...72 | 0.2 |
| MM1Z75 | 6H | 75 | 2.5 | 300 | 57 | 70...79 | 0.2 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation | Ptot | 500 | mW |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | TStg | -55 to +150 | C |
Characteristics (at TA = 25 C)
| Parameter | Symbol | Max. Unit |
|---|---|---|
| Thermal Resistance Junction to Ambient Air | RthA | 340 C/W |
| Forward Voltage at IF = 10 mA | VF | 0.9 V |
Package Outline (SOD-123)
| Symbol | Dimension in Millimeters (Min) | Dimension in Millimeters (Max) |
|---|---|---|
| A | 0.95 | 1.15 |
| A1 | 0.01 | 0.100 |
| B | 1.55 | 1.65 |
| bp | 0.50 | 0.70 |
| C | 0.09 | 0.150 |
| E | 2.60 | 2.70 |
| HE | 3.45 | 3.85 |
| Lp | 0.20 | 0.45 |
| 0 | 5 |
2411261541_CBI-MM1Z18_C21714153.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
