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quality Planar Die Zener Diode CBI BZT52B10 Medium Current 350mW Power Dissipation Plastic Encapsulate SOD123 factory
quality Planar Die Zener Diode CBI BZT52B10 Medium Current 350mW Power Dissipation Plastic Encapsulate SOD123 factory

Planar Die Zener Diode CBI BZT52B10 Medium Current 350mW Power Dissipation Plastic Encapsulate SOD123

Key Attributes
Model Number: BZT52B10
Product Custom Attributes
Impedance(Zzt):
20Ω
Zener Voltage(Range):
9.8V~10.2V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
10V
Impedance(Zzk):
150Ω
Mfr. Part #:
BZT52B10
Package:
SOD-123
Product Description

Product Overview

This Zener Diode features a planar die construction and 350mW power dissipation on a ceramic PCB. It is designed for general purpose, medium current applications and is ideally suited for automated assembly processes. Lead-free versions are available.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Packaging: Plastic-Encapsulate Diodes (SOD-123)
  • Availability: Lead Free Version

Technical Specifications

Type Number Type Code Nominal Zener Voltage (Vz) @ IZT (V) Min Zener Voltage (V) Max Zener Voltage (V) Test Current (IzT) (mA) Max Zener Impedance (ZzT) @ IZT () Max Reverse Current (IR) @ VR (A) Typical Temperature Coefficent (mV/C) Power Dissipation (Pd) (mW) Forward Voltage (VF) @ IF = 10mA (V) Storage Temperature Range (Tstg) (C) Junction Temperature (Tj) (C)
BZT52B2V4 2WX 2.4 2.35 2.45 5 100 50 -3.5 350 0.9 -55 ~ +150 150
BZT52B2V7 2W1 2.7 2.65 2.75 5 100 20 -3.5 350 0.9 -55 ~ +150 150
BZT52B3V0 2W2 3.0 2.94 3.06 5 95 10 -3.5 350 0.9 -55 ~ +150 150
BZT52B3V3 2W3 3.3 3.23 3.37 5 95 5 -3.5 350 0.9 -55 ~ +150 150
BZT52B3V6 2W4 3.6 3.53 3.67 5 90 5 -3.5 350 0.9 -55 ~ +150 150
BZT52B3V9 2W5 3.9 3.82 3.98 5 90 3 -3.5 350 0.9 -55 ~ +150 150
BZT52B4V3 2W6 4.3 4.21 4.39 5 90 3 -3.5 350 0.9 -55 ~ +150 150
BZT52B4V7 2W7 4.7 4.61 4.79 5 80 3 -3.5 350 0.9 -55 ~ +150 150
BZT52B5V1 2W8 5.1 5.00 5.20 5 60 2 -2.7 350 0.9 -55 ~ +150 150
BZT52B5V6 2W9 5.6 5.49 5.71 5 40 1 -2.0 350 0.9 -55 ~ +150 150
BZT52B6V2 2WA 6.2 6.08 6.32 5 10 3 0.4 350 0.9 -55 ~ +150 150
BZT52B6V8 2WB 6.8 6.66 6.94 5 15 2 1.2 350 0.9 -55 ~ +150 150
BZT52B7V5 2WC 7.5 7.35 7.65 5 15 1 2.5 350 0.9 -55 ~ +150 150
BZT52B8V2 2WD 8.2 8.04 8.36 5 15 0.7 3.2 350 0.9 -55 ~ +150 150
BZT52B9V1 2WE 9.1 8.92 9.28 5 15 0.5 3.8 350 0.9 -55 ~ +150 150
BZT52B10 2WF 10 9.80 10.20 5 20 0.2 4.5 350 0.9 -55 ~ +150 150
BZT52B11 2WG 11 10.78 11.22 5 20 0.1 5.4 350 0.9 -55 ~ +150 150
BZT52B12 2WH 12 11.76 12.24 5 25 0.1 6.0 350 0.9 -55 ~ +150 150
BZT52B13 2WI 13 12.74 13.26 5 30 0.1 7.0 350 0.9 -55 ~ +150 150
BZT52B15 2WJ 15 14.70 15.30 5 30 0.1 9.2 350 0.9 -55 ~ +150 150
BZT52B16 2WK 16 15.68 16.32 5 40 0.1 10.4 350 0.9 -55 ~ +150 150
BZT52B18 2WL 18 17.64 18.36 5 45 0.1 12.4 350 0.9 -55 ~ +150 150
BZT52B20 2WM 20 19.60 20.40 5 55 0.1 14.4 350 0.9 -55 ~ +150 150
BZT52B22 2WN 22 21.56 22.44 5 55 0.1 16.4 350 0.9 -55 ~ +150 150
BZT52B24 2WO 24 23.52 24.48 5 70 0.1 18.4 350 0.9 -55 ~ +150 150
BZT52B27 2WP 27 26.46 27.54 2 80 0.1 21.4 350 0.9 -55 ~ +150 150
BZT52B30 2WQ 30 29.40 30.60 2 80 0.1 24.4 350 0.9 -55 ~ +150 150
BZT52B33 2WR 33 32.34 33.66 2 80 0.1 27.4 350 0.9 -55 ~ +150 150
BZT52B36 2WS 36 35.28 36.72 2 90 0.1 30.4 350 0.9 -55 ~ +150 150
BZT52B39 2WT 39 38.22 39.78 2 130 0.1 33.4 350 0.9 -55 ~ +150 150
BZT52B43 2WU 43 41.16 42.84 2 130 0.1 36.4 350 0.9 -55 ~ +150 150

Package Outline (SOD-123)

Symbol Dimension (mm) Min Dimension (mm) Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. Test frequency f = 1kHz.

2410121341_CBI-BZT52B10_C21714222.pdf

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