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quality Plastic encapsulated N channel MOSFET CBI 2SK3018W with low voltage drive and fast switching speed factory
quality Plastic encapsulated N channel MOSFET CBI 2SK3018W with low voltage drive and fast switching speed factory

Plastic encapsulated N channel MOSFET CBI 2SK3018W with low voltage drive and fast switching speed

Key Attributes
Model Number: 2SK3018W
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018W
Package:
SOT-323
Product Description

Product Overview

This N-channel MOSFET is designed for low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. It offers easily designed drive circuits and is suitable for parallel applications. The device is a plastic-encapsulated MOSFET in a SOT-323 package.

Product Attributes

  • Marking: KN
  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Plastic-Encapsulate MOSFETS
  • Package: SOT-323

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
MAXIMUM RATINGS (Ta = 25C unless otherwise noted)
Drain-Source voltage VDS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 0.1 A
Power Dissipation PD 0.2 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
Thermal Resistance from Junction to Ambient RJA 625 /W
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted)
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10A 30 V
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 A
Gate Source leakage current IGSS VGS =20V, VDS = 0V 2 uA
Gate Threshold Voltage VGS(th) VDS =3V, ID =100A 0.8 1.5 V
Drain-Source On-Resistance RDS(on) VGS = 4V, ID =10mA 8
Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 13
Forward Transconductance gFS VDS =3V, ID =10mA 20 mS
Dynamic Characteristics*
Input Capacitance Ciss VDS =5V,VGS =0V,f =1MHz 13 pF
Output Capacitance Coss 9 pF
Reverse Transfer Capacitance Crss 4 pF
Switching Characteristics*
Turn-On Delay Time td(on) VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 15 ns
Rise Time tr 35 ns
Turn-Off Delay Time td(off) 80 ns
Fall Time tf 80 ns
*These parameters have no way to verify

2410122003_CBI-2SK3018W_C2928248.pdf

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