dissipation P channel MOSFET Central CTLDM7590 TR ideal for load switches boost converters and battery management
Key Attributes
Model Number:
CTLDM7590 TR
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
140mA
RDS(on):
17Ω@1.5V,10mA
Operating Temperature -:
-65℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Pd - Power Dissipation:
125mW
Input Capacitance(Ciss):
10pF
Output Capacitance(Coss):
3.7pF
Gate Charge(Qg):
500pC@4.5V
Mfr. Part #:
CTLDM7590 TR
Product Description
Product Overview
The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel Silicon MOSFET designed for high-speed pulsed amplifiers and drivers. It offers beneficial low rDS(ON), low threshold voltage, and very low gate charge characteristics. This MOSFET is suitable for applications such as load/power switches, boost/buck converters, and battery charging/power management. It features ESD protection up to 2kV and is available in an ultra-small, ultra-low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Package: TLM3D6D8 CASE R3
- Marking Code: 2
- Lead Code: 1) Gate, 2) Source, 3) Drain
Technical Specifications
| Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS | 20 | V | |||
| VGS | 8.0 | V | |||
| ID | Continuous Drain Current (Steady State) | 140 | mA | ||
| ID | Pulsed Drain Current, tp=10s | 600 | mA | ||
| PD | Power Dissipation | 125 | mW | ||
| TJ, Tstg | Operating and Storage Junction Temperature | -65 | +150 | C | |
| JA | Thermal Resistance | 1000 | C/W | ||
| IGSSF, IGSSR | VGS=5.0V, VDS=0 | 100 | nA | ||
| IDSS | VDS=5.0V, VGS=0 | 50 | nA | ||
| IDSS | VDS=16V, VGS=0 | 100 | nA | ||
| BVDSS | VGS=0, ID=250A | 20 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 0.4 | 1.0 | V | |
| rDS(ON) | VGS=4.5V, ID=100mA | 4.0 | 5.0 | ||
| rDS(ON) | VGS=2.5V, ID=50mA | 5.5 | 7.0 | ||
| rDS(ON) | VGS=1.8V, ID=20mA | 8.0 | 10 | ||
| rDS(ON) | VGS=1.5V, ID=10mA | 11 | 17 | ||
| rDS(ON) | VGS=1.2V, ID=1.0mA | 20 | |||
| Qg(tot) | VDS=10V, VGS=4.5V, ID=100mA | 0.50 | nC | ||
| Qgs | VDS=10V, VGS=4.5V, ID=100mA | 0.17 | nC | ||
| Qgd | VDS=10V, VGS=4.5V, ID=100mA | 0.11 | nC | ||
| gFS | VDS=5.0V, ID=125mA | 140 | mS | ||
| Crss | VDS=15V, VGS=0, f=1.0MHz | 4.0 | pF | ||
| Ciss | VDS=15V, VGS=0, f=1.0MHz | 10 | pF | ||
| Coss | VDS=15V, VGS=0, f=1.0MHz | 3.7 | pF | ||
| ton | VDD=10V, VGS=4.5V, ID=200mA | 35 | ns | ||
| toff | VDD=10V, VGS=4.5V, ID=200mA | 100 | ns |
2411220722_Central-CTLDM7590-TR_C19596455.pdf
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