Surface mount Central CMDSH-4E TR PBFREE diode with 200mA max current and 40V reverse voltage rating
Key Attributes
Model Number:
CMDSH-4E TR PBFREE
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@25V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@0.2A
Current - Rectified:
200mA
Mfr. Part #:
CMDSH-4E TR PBFREE
Package:
SOD-323
Product Description
Product Overview
The CENTRAL SEMICONDUCTOR CMDSH-4E is an enhanced silicon Schottky diode designed for surface mount applications. It offers improved specifications compared to its predecessor, the CMDSH-3, with increased IO from 100mA to 200mA MAX and a higher BVR from 30V to 40V MIN. This diode is suitable for various electronic circuits requiring efficient rectification and low forward voltage drop.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Product Family: CMDSH
- Model: CMDSH-4E
- Type: Silicon Schottky Diode
- Package: SOD-323
- Marking Code: S1E
Technical Specifications
| Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| MAXIMUM RATINGS: (TA=25C) | |||||
| VRRM | 40 | V | |||
| IO | 200 | mA | |||
| IFRM | 350 | mA | |||
| IFSM | tp=10ms | 750 | mA | ||
| PD | 250 | mW | |||
| TJ, Tstg | -65 to +150 | C | |||
| JA | 500 | C/W | |||
| ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) | |||||
| IR | VR=25V | 90 | 500 | nA | |
| IR | VR=25V, TA=100C | 25 | 100 | A | |
| BVR | IR=100A | 40 | 50 | V | |
| VF | IF=2.0mA | 0.29 | 0.33 | V | |
| VF | IF=15mA | 0.37 | 0.42 | V | |
| VF | IF=100mA | 0.51 | 0.80 | V | |
| VF | IF=200mA | 0.65 | 1.0 | V | |
| CJ | VR=1.0V, f=1.0MHz | 7.0 | pF | ||
| trr | IF=IR=10mA, Irr=1.0mA, RL=100 | 5.0 | ns | ||
2410121849_Central-CMDSH-4E-TR-PBFREE_C5240486.pdf
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