Low on resistance P Channel MOSFET Central CMLDM8120G TR PBFREE ideal for portable battery powered equipment
Product Overview
The CMLDM8120 and CMLDM8120G* are surface mount silicon P-Channel enhancement-mode MOSFETs, manufactured using the P-Channel DMOS Process. They are designed for high-speed pulsed amplifier and driver applications, offering low on-resistance (rDS(on)) and low threshold voltage. These devices are logic-level compatible and come in a small SOT-563 package. Applications include load/power switches, power supply converter circuits, and battery-powered portable equipment.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Product Series: CMLDM8120 / CMLDM8120G*
- Package Type: SOT-563
- Certifications: Halogen Free by design
- Marking Codes: CMLDM8120: C81, CMLDM8120G*: C8G
Technical Specifications
| Symbol | Test Conditions | Min | Typ | Max | Units |
| IGSSF, IGSSR | VGS=8.0V, VDS=0 | 1.0 | 50 | nA | |
| IDSS | VDS=20V, VGS=0 | 5.0 | 500 | nA | |
| BVDSS | VGS=0, ID=250A | 20 | 24 | V | |
| VGS(th) | VDS=VGS, ID=250A | 0.45 | 0.76 | 1.0 | V |
| VSD | VGS=0V, IS=360mA | 0.9 | V | ||
| rDS(ON) | VGS=4.5V, ID=0.95A | 0.085 | 0.15 | ||
| rDS(ON) | VGS=4.5V, ID=0.77A | 0.085 | 0.142 | ||
| rDS(ON) | VGS=2.5V, ID=0.67A | 0.13 | 0.20 | ||
| rDS(ON) | VGS=1.8V, ID=0.2A | 0.19 | 0.24 | ||
| gFS | VDS=10V, ID=0.81A | 2.0 | S | ||
| Crss | VDS=16V, VGS=0, f=1.0MHz | 80 | pF | ||
| Ciss | VDS=16V, VGS=0, f=1.0MHz | 200 | pF | ||
| Coss | VDS=16V, VGS=0, f=1.0MHz | 60 | pF | ||
| Qg(tot) | VDS=10V, VGS=4.5V, ID=1.0A | 3.56 | nC | ||
| Qgs | VDS=10V, VGS=4.5V, ID=1.0A | 0.36 | nC | ||
| Qgd | VDS=10V, VGS=4.5V, ID=1.0A | 1.52 | nC | ||
| ton | VDD=10V, VGS=4.5V, ID=0.95A, RG=6 | 20 | ns | ||
| toff | VDD=10V, VGS=4.5V, ID=0.95A, RG=6 | 25 | ns |
2411212320_Central-CMLDM8120G-TR-PBFREE_C5240491.pdf
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