86--136 6733 2386
quality Schottky diode Changzhou Starsea Elec SD103AW with low forward voltage drop and transient protection factory
quality Schottky diode Changzhou Starsea Elec SD103AW with low forward voltage drop and transient protection factory

Schottky diode Changzhou Starsea Elec SD103AW with low forward voltage drop and transient protection

Key Attributes
Model Number: SD103AW
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@30V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
SD103AW
Package:
SOD-123
Product Description

Product Overview

The SD103AW, SD103BW, and SD103CW are Schottky diodes designed for various applications. They feature a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low reverse capacitance. These diodes are suitable for general-purpose rectification and switching applications where fast response and low power loss are critical.

Product Attributes

  • Case: Molded plastic body
  • Terminals: Plated leads, solderable per MIL-STD-750, Method 2026
  • Polarity: Symbols marked on case
  • Mounting Position: Any
  • Marking: SD103AW:S4, SD103BW:S5, SD103CW:S6

Technical Specifications

Parameter Symbol SD103AW SD103BW SD103CW Unit Conditions
Maximum Ratings and Electrical Characteristics
Peak repetitive peak reverse voltage VRRM 40 30 20 Volts @TA=25C
Working peak reverse voltage VRWM 350
DC Blocking voltage VDC 400 300
RMS Reverse voltage VR(RMS) 28 21
Forward continuous current IF(AV) 1.5 A
Repetitive peak forward current @t 1.0s IFRM 14 A
Power dissipation Pd mW
Thermal resistance junction to ambient RJA C/W
Storage temperature TSTG -65 to +125 C
Electrical Ratings
Reverse breakdown voltage V(BR)R 40 30 20 V IR=100uA
Forward voltage VF 0.37 0.60 5.0 V IF=20mA
Reverse current IR 50 uA VR=30V
Capacitance between terminals CT pF VR=0V, f=1.0MHz
Reverse recovery time trr ns IF=IR=200mA, Irr=0.1XIR, RL=100
Dimensions (SOD-123)
Length 3.86(.152) - 3.56(.145) mm(inches)
Width 2.84(.112) - 2.54(.100) mm(inches)
Height 1.80(.071) - 1.40(.055) mm(inches)
Terminal width .71(.028) - .50(.020) mm(inches)
Lead thickness .15(.006) mm(inches)
Lead spacing 1.35(.053) - .94(.037) mm(inches)

2204081930_Changzhou-Starsea-Elec-SD103AW_C2992091.pdf

Related Products
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version factory
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.