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quality Low Forward Voltage Drop Schottky Diode Chao He B5819WS SOD323 Plastic Package Surface Mount factory
quality Low Forward Voltage Drop Schottky Diode Chao He B5819WS SOD323 Plastic Package Surface Mount factory

Low Forward Voltage Drop Schottky Diode Chao He B5819WS SOD323 Plastic Package Surface Mount

Key Attributes
Model Number: B5819WS
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@40V
Non-Repetitive Peak Forward Surge Current:
9A
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
900mV@3A
Current - Rectified:
1A
Mfr. Part #:
B5819WS
Package:
SOD-323
Product Description

Product Overview

The CHAOHE MICROELECTRONICS CO., LTD. 1N5817WS, 1N5818WS, and 1N5819WS are Schottky barrier diodes encapsulated in a small SOD-323 surface-mounted device (SMD) plastic package. These diodes are designed for general-purpose switching applications and are ideally suited for automatic insertion. Key features include a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. The plastic package is halogen-free.

Product Attributes

  • Brand: CHAOHE MICROELECTRONICS CO., LTD.
  • Package Type: SOD-323
  • Material: Plastic
  • Certifications: UL 94V-0 (Flammability rating)
  • Environmental: Halogen free
  • Packing: Tape & reel

Technical Specifications

Parameter Symbol 1N5817WS 1N5818WS 1N5819WS Unit
Limiting Values (Ta=25)
Non-repetitive peak reverse voltage VRM 20 30 40 V
Peak repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage VRRM / VRWM / VR 20 30 40 V
RMS reverse voltage VR(RMS) 14 21 28 V
Average rectified output current IO 1 A
Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 9 A
Repetitive peak forward current IFRM 1.5 A
Power dissipation Pd 250 mW
Thermal resistance junction to ambient RJA 400 /W
Operation Junction temperature Range TJ -40~+125
Storage temperature Range TSTG -55~+150
Electrical Characteristics (Ta=25)
Reverse breakdown voltage V(BR)R 20 (IR=1mA) 30 (IR=1mA) 40 (IR=1mA) V
Reverse voltage leakage current IR 1 (VR=20V) 1 (VR=30V) 1 (VR=40V) mA
Forward voltage VF 0.45 (IF=1A) / 0.75 (IF=3A) 0.55 (IF=1A) / 0.875 (IF=3A) 0.6 (IF=1A) / 0.9 (IF=3A) V
1N5817WS 1N5818WS 1N5819WS
Diode capacitance CD 120 (VR=4V, f=1MHz) pF
Part Number Marking Code
1N5817WS SJ
1N5818WS SK
1N5819WS SL
Model Package Packing Quantity per reel Reel size
1N5817WS THRU 1N5819WS SOD-323 3,000pcs 7 inches
Symbol Dimension in millimeter Min Nom Max
A 0.95 1.0 1.05
A1 0.0 0.05 0.1
A2 0.85 0.90 0.95
A3 0.35 0.40 0.45
b 0.30 0.35 0.40
c 0.127 0.131 0.135
D 1.20 1.25 1.30
E 2.50 2.65 2.80
E1 1.65 1.70 1.75
L 0.20 0.30 0.40
L1 0.45 0.65
0 3 8

2509251450_Chao-He-B5819WS_C51953485.pdf

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