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quality CET Chino Excel Tech CEM3172 N Channel MOSFET Featuring Low On Resistance and High Current Capability factory
quality CET Chino Excel Tech CEM3172 N Channel MOSFET Featuring Low On Resistance and High Current Capability factory

CET Chino Excel Tech CEM3172 N Channel MOSFET Featuring Low On Resistance and High Current Capability

Key Attributes
Model Number: CEM3172
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.9A
Operating Temperature -:
-
RDS(on):
32mΩ@4.5V,5.0A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
-
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
590pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
CEM3172
Package:
SOP-8
Product Description

Product Overview

The CEM3172 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package transistor is suitable for various industrial applications requiring efficient power switching.

Product Attributes

  • Brand: D D D D S S S G
  • Model: CEM3172
  • Package: SO-8
  • Certifications: Lead free product is acquired.
  • Origin: CETsemi (implied by URL)

Technical Specifications

Parameter Symbol Min Typ Max Units Test Condition
FEATURES
Drain-Source Voltage VDS 30 V
Drain Current-Continuous ID 8.9 A TA = 25 C
RDS(ON) @ VGS = 10V 20 m VGS = 10V
RDS(ON) @ VGS = 4.5V 32 m VGS = 4.5V
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 30 V TA = 25 C unless otherwise noted
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 8.9 A TA = 25 C unless otherwise noted
Drain Current-Pulsed IDM 30 A a
Maximum Power Dissipation PD 2.5 W SO-8
Operating and Store Temperature Range TJ,Tstg -55 150 C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RJA 50 C/W b
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 100 A VDS = 30V, VGS = 0V
Gate Body Leakage Current, Forward IGSSF 1 100 nA VGS = 20V, VDS = 0V
Gate Body Leakage Current, Reverse IGSSR -1 -100 nA VGS = -20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2 3 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(on) 20 m VGS = 10V, ID = 6.3A
Static Drain-Source On-Resistance RDS(on) 32 m VGS = 4.5V, ID = 5.0A
Forward Transconductance gFS 590 mS VDS = 15V, ID = 6A
Input Capacitance Ciss 590 pF VDS = 15V, ID = 7A, VGS = 10V, RGEN = 3
Reverse Transfer Capacitance Coss 125 pF VDS = 15V, ID = 7A, VGS = 10V
Output Capacitance Crss 95 pF VDS = 15V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time td(on) 10 ns
Turn-On Rise Time tr 4 ns
Turn-Off Delay Time td(off) 25 ns
Turn-Off Fall Time tf 8 ns
Total Gate Charge Qg 20 nC
Gate-Source Charge Qgs 8 nC
Gate-Drain Charge Qgd 5 nC
Drain-Source Diode Forward Current IS 22 A b
Drain-Source Diode Forward Voltage VSD 1.2 1.4 V c, VGS = 0V, IS = 2A

Notes:

  • a. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • b. Surface Mounted on FR4 Board, t < 10 sec.
  • c. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%.
  • d. Guaranteed by design, not subject to production testing.

2411220407_CET-Chino-Excel-Tech-CEM3172_C154311.pdf

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