High current power transistor CET Chino Excel Tech CEP6186 designed for power switching applications
Key Attributes
Model Number:
CEP6186
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.12nF
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
43W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
CEP6186
Package:
TO-220
Product Description
Product Overview
The CEP6186/CEB6186 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. Available in TO-220 and TO-263 packages, this transistor is suitable for various industrial and electronic applications requiring efficient power switching.
Product Attributes
- Brand: CET Semi
- Product Series: CEP6186/CEB6186
- Package Types: TO-220, TO-263 (DD-PAK)
- Lead Free Product: Acquired
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| FEATURES | ||||
| Voltage | VDS | 60 | V | |
| Continuous Drain Current | ID | 33 | A | |
| RDS(ON) @ VGS = 10V | RDS(ON) | 25 | m | |
| RDS(ON) @ VGS = 4.5V | RDS(ON) | 32 | m | |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 60 | V | Tc = 25 C unless otherwise noted |
| Gate-Source Voltage | VGS | ±20 | V | Tc = 25 C unless otherwise noted |
| Drain Current-Continuous | ID | 33 | A | Tc = 25 C unless otherwise noted |
| Drain Current-Pulsed | IDM | 132 | A | Tc = 25 C unless otherwise noted |
| Maximum Power Dissipation @ TC = 25 C | PD | 0.28 | W | Tc = 25 C unless otherwise noted |
| Derate above 25 C | 43 | W/ C | Tc = 25 C unless otherwise noted | |
| Operating and Store Temperature Range | TJ,Tstg | -55 to 175 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | RJC | 62.5 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 3.5 | C/W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V |
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 3 | V | VGS = VDS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(on) | 25 | m | VGS = 10V, ID = 19A |
| Static Drain-Source On-Resistance | RDS(on) | 32 | m | VGS = 4.5V, ID = 10A |
| Input Capacitance | Ciss | 1120 | pF | VDS = 60V, ID = 19A, VGS = 10V, RGEN = 4.7Ω |
| Reverse Transfer Capacitance | Crss | 75 | pF | VDS = 48V, ID = 28A, VGS = 10V |
| Output Capacitance | Coss | 125 | pF | VDS = 25V, VGS = 0V, f = 1.0 MHz |
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω |
| Turn-On Rise Time | tr | 38 | ns | VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω |
| Turn-Off Delay Time | td(off) | 30 | ns | VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω |
| Turn-Off Fall Time | tf | 24 | ns | VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω |
| Total Gate Charge | Qg | 76 | nC | VDS = 25V, VGS = 0V, f = 1.0 MHz |
| Gate-Source Charge | Qgs | 20 | nC | VDS = 25V, VGS = 0V, f = 1.0 MHz |
| Gate-Drain Charge | Qgd | 24 | nC | VDS = 25V, VGS = 0V, f = 1.0 MHz |
| Drain-Source Diode Forward Current | IS | 33 | A | VGS = 0V, IS = 33A |
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | VGS = 0V, IS = 33A |
Notes:
- a. Repetitive Rating: Pulse width limited by maximum junction temperature.
- b. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%.
- c. Guaranteed by design, not subject to production testing.
2411212320_CET-Chino-Excel-Tech-CEP6186_C154181.pdf
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