Durable ChipNobo ES1D rectifier diode designed for residential and commercial equipment circuit boards
Key Attributes
Model Number:
ES1D
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1V@1.0A
Current - Rectified:
1A
Mfr. Part #:
ES1D
Package:
SMA
Product Description
Product Overview
The ES1D is a high-performance rectifier diode designed for printed circuit board applications. It features glass passivation for enhanced reliability, low reverse leakage, and high forward surge current capability. This diode is ideal for use in residential and commercial equipment. It is designed to withstand high soldering temperatures and is suitable for various reflow methods.
Product Attributes
- Brand: ChipNobo
- Package Type: DO-214AC/SMA
- Flammability Classification: Underwriters Laboratory 94V-0
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Material: Molded plastic body, Glass passivated Junction chip
Technical Specifications
| Parameter | SYMBOLS | UNIT | Rating | Test Condition |
|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | V | 200 | |
| Maximum RMS voltage | VRMS | V | 140 | |
| Maximum DC blocking voltage | VDC | V | 200 | |
| Maximum average forward rectified current | I(AV) | A | 1.0 | TL=100 C, Single phase half-wave 60Hz, resistive or inductive load |
| Peak forward surge current | IFSM | A | 30.0 | 8.3ms single half sine-wave superimposed on rated load |
| Maximum instantaneous forward voltage | VF | V | 1.0 | at 1.0A |
| Maximum DC reverse current | IR | A | 5.0 | at rated DC blocking voltage, TA =25 C |
| Maximum DC reverse current | IR | mA | 0.25 | at rated DC blocking voltage, TA=125 C |
| Typical junction capacitance | CJ | pF | 65.0 | Measured at 1MHz and applied reverse voltage of 4.0V D.C. (Note2) |
| Typical thermal resistance | RqJA | C/W | 21.0 | |
| Operating junction and storage temperature range | TJ,TSTG | C | -55 to +150 | |
| Maximum reverse recovery time | Trr | ns | 35 | IF=0.5A, IR=1.0A, Irr=0.25A (Note 1) |
| Weight | ounce/grams | 0.0023 / 0.07 | ||
| Dimensions (Body) | (approx.) | inches (mm) | 0.208(5.30) x 0.177(4.50) x 0.098(2.50) | |
| Dimensions (Lead diameter) | (approx.) | inches (mm) | 0.012(0.305) - 0.006(0.152) |
Note 1: Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A
Note 2: Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Soldering Temperature: Maximum temperature of 260C for 10 seconds.
Cleaning: Devices can be cleaned using standard industry methods and solvents.
Capacitive load current derating: Derate by 20% for capacitive load.
2507091655_ChipNobo-ES1D_C42459013.pdf
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